A comparative study of atomic layer deposited advanced high-k dielectrics

S. Dueñas, H. Castán, H. García, J. Barbolla, K. Kukli, J. Aarik, M. Ritala, M. Leskelä

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publication2005 Spanish Conference on Electron Devices
    Number of pages4
    PublisherInstitute of Electrical and Electronics Engineers
    Publication date2005
    Pages29-32
    ISBN (Print)0-7803-8810-0
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA4 Article in conference proceedings
    Event5th Spanish Conference on Electron Devices - Tarragona, Spain
    Duration: 2 Feb 20054 Feb 2005
    Conference number: 5th

    Fields of Science

    • 116 Chemical sciences

    Cite this

    Dueñas, S., Castán, H., García, H., Barbolla, J., Kukli, K., Aarik, J., ... Leskelä, M. (2005). A comparative study of atomic layer deposited advanced high-k dielectrics. In 2005 Spanish Conference on Electron Devices (pp. 29-32). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SCED.2005.1504298
    Dueñas, S. ; Castán, H. ; García, H. ; Barbolla, J. ; Kukli, K. ; Aarik, J. ; Ritala, M. ; Leskelä, M. / A comparative study of atomic layer deposited advanced high-k dielectrics. 2005 Spanish Conference on Electron Devices. Institute of Electrical and Electronics Engineers, 2005. pp. 29-32
    @inproceedings{c64f800f1678477783bc45d2a4af8cec,
    title = "A comparative study of atomic layer deposited advanced high-k dielectrics",
    keywords = "116 Chemical sciences",
    author = "S. Due{\~n}as and H. Cast{\'a}n and H. Garc{\'i}a and J. Barbolla and K. Kukli and J. Aarik and M. Ritala and M. Leskel{\"a}",
    note = "Volume: Proceeding volume:",
    year = "2005",
    doi = "10.1109/SCED.2005.1504298",
    language = "English",
    isbn = "0-7803-8810-0",
    pages = "29--32",
    booktitle = "2005 Spanish Conference on Electron Devices",
    publisher = "Institute of Electrical and Electronics Engineers",
    address = "United States",

    }

    Dueñas, S, Castán, H, García, H, Barbolla, J, Kukli, K, Aarik, J, Ritala, M & Leskelä, M 2005, A comparative study of atomic layer deposited advanced high-k dielectrics. in 2005 Spanish Conference on Electron Devices. Institute of Electrical and Electronics Engineers, pp. 29-32, 5th Spanish Conference on Electron Devices, Tarragona, Spain, 02/02/2005. https://doi.org/10.1109/SCED.2005.1504298

    A comparative study of atomic layer deposited advanced high-k dielectrics. / Dueñas, S.; Castán, H.; García, H.; Barbolla, J.; Kukli, K.; Aarik, J.; Ritala, M.; Leskelä, M.

    2005 Spanish Conference on Electron Devices. Institute of Electrical and Electronics Engineers, 2005. p. 29-32.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    TY - GEN

    T1 - A comparative study of atomic layer deposited advanced high-k dielectrics

    AU - Dueñas, S.

    AU - Castán, H.

    AU - García, H.

    AU - Barbolla, J.

    AU - Kukli, K.

    AU - Aarik, J.

    AU - Ritala, M.

    AU - Leskelä, M.

    N1 - Volume: Proceeding volume:

    PY - 2005

    Y1 - 2005

    KW - 116 Chemical sciences

    U2 - 10.1109/SCED.2005.1504298

    DO - 10.1109/SCED.2005.1504298

    M3 - Conference contribution

    SN - 0-7803-8810-0

    SP - 29

    EP - 32

    BT - 2005 Spanish Conference on Electron Devices

    PB - Institute of Electrical and Electronics Engineers

    ER -

    Dueñas S, Castán H, García H, Barbolla J, Kukli K, Aarik J et al. A comparative study of atomic layer deposited advanced high-k dielectrics. In 2005 Spanish Conference on Electron Devices. Institute of Electrical and Electronics Engineers. 2005. p. 29-32 https://doi.org/10.1109/SCED.2005.1504298