Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz

P. K Sahoo, S Gasiorek, K. P Lieb, Kai Arstila, Juhani Keinonen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume87
    Issue number2
    Pages (from-to)021105
    Number of pages3
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Fields of Science

    • 114 Physical sciences

    Cite this

    Sahoo, P. K ; Gasiorek, S ; Lieb, K. P ; Arstila, Kai ; Keinonen, Juhani. / Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz. In: Applied Physics Letters. 2005 ; Vol. 87, No. 2. pp. 021105.
    @article{b927d6c16bc34c06a4bf07a5ffb0d7e9,
    title = "Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz",
    abstract = "The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75{\%}) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.",
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    author = "Sahoo, {P. K} and S Gasiorek and Lieb, {K. P} and Kai Arstila and Juhani Keinonen",
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    Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz. / Sahoo, P. K; Gasiorek, S; Lieb, K. P; Arstila, Kai; Keinonen, Juhani.

    In: Applied Physics Letters, Vol. 87, No. 2, 2005, p. 021105.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz

    AU - Sahoo, P. K

    AU - Gasiorek, S

    AU - Lieb, K. P

    AU - Arstila, Kai

    AU - Keinonen, Juhani

    PY - 2005

    Y1 - 2005

    N2 - The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.

    AB - The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.

    KW - 114 Physical sciences

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