| Original language | English |
|---|---|
| Title of host publication | 2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS) |
| Number of pages | 4 |
| Publisher | IEEE |
| Publication date | 2017 |
| ISBN (Electronic) | 978-1-5386-5108-7 |
| DOIs | |
| Publication status | Published - 2017 |
| MoE publication type | A4 Article in conference proceedings |
| Event | 32nd Conference on Design of Circuits and Integrated Systems (DCIS) - Barcelona, Spain Duration: 22 Nov 2017 → 24 Nov 2017 |
Fields of Science
- Resistive memories
- admittance memory cycles
- Ta2O5:ZrO2 ALD films
- 114 Physical sciences
- 116 Chemical sciences
Cite this
}
Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices. / Duenas, S.; Castan, H.; Ossorio, O. G.; Dominguez, L. A.; Gracia, H.; Kalam, K.; Kukli, K.; Ritala, M.; Leskelä, M.
2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS). IEEE, 2017.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
TY - GEN
T1 - Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices
AU - Duenas, S.
AU - Castan, H.
AU - Ossorio, O. G.
AU - Dominguez, L. A.
AU - Gracia, H.
AU - Kalam, K.
AU - Kukli, K.
AU - Ritala, M.
AU - Leskelä, M.
PY - 2017
Y1 - 2017
KW - Resistive memories
KW - admittance memory cycles
KW - Ta2O5:ZrO2 ALD films
KW - 114 Physical sciences
KW - 116 Chemical sciences
U2 - 10.1109/DCIS.2017.8311627
DO - 10.1109/DCIS.2017.8311627
M3 - Conference contribution
BT - 2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS)
PB - IEEE
ER -