Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

S. Duenas; H. Castan; O. G. Ossorio; L. A. Dominguez; H. Gracia; K. Kalam; K. Kukli; M. Ritala; M. Leskelä

doi:10.1109/DCIS.2017.8311627

Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

S. Duenas, H. Castan, O. G. Ossorio, L. A. Dominguez, H. Gracia, K. Kalam, K. Kukli, M. Ritala, M. Leskelä

Department of Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Original language	English
Title of host publication	2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS)
Number of pages	4
Publisher	IEEE
Publication date	2017
ISBN (Electronic)	978-1-5386-5108-7
DOIs	https://doi.org/10.1109/DCIS.2017.8311627
Publication status	Published - 2017
MoE publication type	A4 Article in conference proceedings
Event	32nd Conference on Design of Circuits and Integrated Systems (DCIS) - Barcelona, Spain Duration: 22 Nov 2017 → 24 Nov 2017

Fields of Science

Resistive memories
admittance memory cycles
Ta2O5:ZrO2 ALD films
114 Physical sciences
116 Chemical sciences

Access to Document

10.1109/DCIS.2017.8311627

DCIS_2017_paper_15_final_DuenasAccepted author manuscript, 398 KBLicence: Unspecified

Cite this

@inproceedings{19511afb080c40fa923cae5234640b0f,

title = "Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices",

keywords = "Resistive memories, admittance memory cycles, Ta2O5:ZrO2 ALD films, 114 Physical sciences, 116 Chemical sciences",

author = "S. Duenas and H. Castan and Ossorio, {O. G.} and Dominguez, {L. A.} and H. Gracia and K. Kalam and K. Kukli and M. Ritala and M. Leskel{\"a}",

year = "2017",

doi = "10.1109/DCIS.2017.8311627",

language = "English",

booktitle = "2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS)",

publisher = "IEEE",

address = "United States",

note = "32nd Conference on Design of Circuits and Integrated Systems (DCIS) ; Conference date: 22-11-2017 Through 24-11-2017",

}

Duenas, S, Castan, H, Ossorio, OG, Dominguez, LA, Gracia, H, Kalam, K, Kukli, K, Ritala, M & Leskelä, M 2017, Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices. in 2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS). IEEE, 32nd Conference on Design of Circuits and Integrated Systems (DCIS), Barcelona, Spain, 22/11/2017. https://doi.org/10.1109/DCIS.2017.8311627

Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices. / Duenas, S.; Castan, H.; Ossorio, O. G.; Dominguez, L. A.; Gracia, H.; Kalam, K.; Kukli, K.; Ritala, M.; Leskelä, M.

2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS). IEEE, 2017.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

AU - Duenas, S.

AU - Castan, H.

AU - Ossorio, O. G.

AU - Dominguez, L. A.

AU - Gracia, H.

AU - Kalam, K.

AU - Kukli, K.

AU - Ritala, M.

AU - Leskelä, M.

PY - 2017

Y1 - 2017

KW - Resistive memories

KW - admittance memory cycles

KW - Ta2O5:ZrO2 ALD films

KW - 114 Physical sciences

KW - 116 Chemical sciences

U2 - 10.1109/DCIS.2017.8311627

DO - 10.1109/DCIS.2017.8311627

M3 - Conference contribution

BT - 2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS)

PB - IEEE

T2 - 32nd Conference on Design of Circuits and Integrated Systems (DCIS)

Y2 - 22 November 2017 through 24 November 2017

ER -