Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

S. Duenas, H. Castan, O. G. Ossorio, L. A. Dominguez, H. Gracia, K. Kalam, K. Kukli, M. Ritala, M. Leskelä

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Original languageEnglish
Title of host publication2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS)
Number of pages4
PublisherIEEE
Publication date2017
ISBN (Electronic)978-1-5386-5108-7
DOIs
Publication statusPublished - 2017
MoE publication typeA4 Article in conference proceedings
Event32nd Conference on Design of Circuits and Integrated Systems (DCIS) - Barcelona, Spain
Duration: 22 Nov 201724 Nov 2017

Fields of Science

  • Resistive memories
  • admittance memory cycles
  • Ta2O5:ZrO2 ALD films
  • 114 Physical sciences
  • 116 Chemical sciences

Cite this

Duenas, S., Castan, H., Ossorio, O. G., Dominguez, L. A., Gracia, H., Kalam, K., ... Leskelä, M. (2017). Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices. In 2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS) IEEE. https://doi.org/10.1109/DCIS.2017.8311627
Duenas, S. ; Castan, H. ; Ossorio, O. G. ; Dominguez, L. A. ; Gracia, H. ; Kalam, K. ; Kukli, K. ; Ritala, M. ; Leskelä, M. / Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices. 2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS). IEEE, 2017.
@inproceedings{19511afb080c40fa923cae5234640b0f,
title = "Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices",
keywords = "Resistive memories, admittance memory cycles, Ta2O5:ZrO2 ALD films, 114 Physical sciences, 116 Chemical sciences",
author = "S. Duenas and H. Castan and Ossorio, {O. G.} and Dominguez, {L. A.} and H. Gracia and K. Kalam and K. Kukli and M. Ritala and M. Leskel{\"a}",
year = "2017",
doi = "10.1109/DCIS.2017.8311627",
language = "English",
booktitle = "2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS)",
publisher = "IEEE",
address = "United States",

}

Duenas, S, Castan, H, Ossorio, OG, Dominguez, LA, Gracia, H, Kalam, K, Kukli, K, Ritala, M & Leskelä, M 2017, Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices. in 2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS). IEEE, 32nd Conference on Design of Circuits and Integrated Systems (DCIS), Barcelona, Spain, 22/11/2017. https://doi.org/10.1109/DCIS.2017.8311627

Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices. / Duenas, S.; Castan, H.; Ossorio, O. G.; Dominguez, L. A.; Gracia, H.; Kalam, K.; Kukli, K.; Ritala, M.; Leskelä, M.

2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS). IEEE, 2017.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

TY - GEN

T1 - Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

AU - Duenas, S.

AU - Castan, H.

AU - Ossorio, O. G.

AU - Dominguez, L. A.

AU - Gracia, H.

AU - Kalam, K.

AU - Kukli, K.

AU - Ritala, M.

AU - Leskelä, M.

PY - 2017

Y1 - 2017

KW - Resistive memories

KW - admittance memory cycles

KW - Ta2O5:ZrO2 ALD films

KW - 114 Physical sciences

KW - 116 Chemical sciences

U2 - 10.1109/DCIS.2017.8311627

DO - 10.1109/DCIS.2017.8311627

M3 - Conference contribution

BT - 2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS)

PB - IEEE

ER -

Duenas S, Castan H, Ossorio OG, Dominguez LA, Gracia H, Kalam K et al. Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices. In 2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS). IEEE. 2017 https://doi.org/10.1109/DCIS.2017.8311627