Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

S. Duenas, H. Castan, O. G. Ossorio, L. A. Dominguez, H. Gracia, K. Kalam, K. Kukli, M. Ritala, M. Leskelä

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Original languageEnglish
Title of host publication2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS)
Number of pages4
PublisherIEEE
Publication date2017
ISBN (Electronic)978-1-5386-5108-7
DOIs
Publication statusPublished - 2017
MoE publication typeA4 Article in conference proceedings
Event32nd Conference on Design of Circuits and Integrated Systems (DCIS) - Barcelona, Spain
Duration: 22 Nov 201724 Nov 2017

Fields of Science

  • Resistive memories
  • admittance memory cycles
  • Ta2O5:ZrO2 ALD films
  • 114 Physical sciences
  • 116 Chemical sciences

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