ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)

A.C. Jones; R. O’Kane; F. Song; P. Heys; P.A. Williams; Lauri Niinistö; Jaakko Niinistö; M. Putkonen; R. Hammond; A. Bacon

ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)

A.C. Jones, R. O’Kane, F. Song, P. Heys, P.A. Williams, Lauri Niinistö, Jaakko Niinistö, M. Putkonen, R. Hammond, A. Bacon

Research output: Book/Report › Commissioned report

Original language	English

Publication status	Published - 2006
Externally published	Yes
MoE publication type	D4 Published development or research report or study

HelsinkiALD
Putkonen, M. (Manager), Ritala, M. (Manager), Mäntymäki, M. (Operator), Kemell, M. (Operator), Vehkamäki, M. (Operator) & Heikkilä, M. (Operator)
Department of Chemistry
Facility/equipment: Research Laboratory

Cite this

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title = "ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)",

author = "A.C. Jones and R. O{\textquoteright}Kane and F. Song and P. Heys and P.A. Williams and Lauri Niinist{\"o} and Jaakko Niinist{\"o} and M. Putkonen and R. Hammond and A. Bacon",

year = "2006",

language = "English",

}

TY - BOOK

T1 - ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)

AU - Jones, A.C.

AU - O’Kane, R.

AU - Song, F.

AU - Heys, P.

AU - Williams, P.A.

AU - Niinistö, Lauri

AU - Niinistö, Jaakko

AU - Putkonen, M.

AU - Hammond, R.

AU - Bacon, A.

PY - 2006

Y1 - 2006

M3 - Commissioned report

BT - ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)

ER -

ALD of HfO2 using a new organometallic Hf precursor, The AVS Topical Conference on Atomic Layer Deposition (ALD 2006)

Equipment

HelsinkiALD

Cite this