Alkylsilyl compounds as enablers of atomic layer deposition

analysis of (Et3Si)(3)As through the GaAs process

Tiina Sarnet, Timo Hatanpää, Mikko Laitinen, Timo Sajavaara, Kenichiro Mizohata, Mikko Ritala, Markku Leskelä

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
JournalJournal of Materials Chemistry. C
Volume4
Issue number3
Pages (from-to)449-454
Number of pages6
ISSN2050-7526
DOIs
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed

Fields of Science

  • III-V COMPOUNDS
  • THIN-FILMS
  • EPITAXY
  • CHEMISTRY
  • GALLIUM
  • GROWTH
  • 116 Chemical sciences
  • 114 Physical sciences

Cite this

@article{bd3deeaa30e14f41aaedaf1454de3975,
title = "Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)(3)As through the GaAs process",
keywords = "III-V COMPOUNDS, THIN-FILMS, EPITAXY, CHEMISTRY, GALLIUM, GROWTH, 116 Chemical sciences, 114 Physical sciences",
author = "Tiina Sarnet and Timo Hatanp{\"a}{\"a} and Mikko Laitinen and Timo Sajavaara and Kenichiro Mizohata and Mikko Ritala and Markku Leskel{\"a}",
year = "2016",
doi = "10.1039/c5tc03079j",
language = "English",
volume = "4",
pages = "449--454",
journal = "Journal of Materials Chemistry. C",
issn = "2050-7526",
publisher = "The Royal Society of Chemistry",
number = "3",

}

Alkylsilyl compounds as enablers of atomic layer deposition : analysis of (Et3Si)(3)As through the GaAs process. / Sarnet, Tiina; Hatanpää, Timo; Laitinen, Mikko; Sajavaara, Timo; Mizohata, Kenichiro; Ritala, Mikko; Leskelä, Markku.

In: Journal of Materials Chemistry. C, Vol. 4, No. 3, 2016, p. 449-454.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Alkylsilyl compounds as enablers of atomic layer deposition

T2 - analysis of (Et3Si)(3)As through the GaAs process

AU - Sarnet, Tiina

AU - Hatanpää, Timo

AU - Laitinen, Mikko

AU - Sajavaara, Timo

AU - Mizohata, Kenichiro

AU - Ritala, Mikko

AU - Leskelä, Markku

PY - 2016

Y1 - 2016

KW - III-V COMPOUNDS

KW - THIN-FILMS

KW - EPITAXY

KW - CHEMISTRY

KW - GALLIUM

KW - GROWTH

KW - 116 Chemical sciences

KW - 114 Physical sciences

U2 - 10.1039/c5tc03079j

DO - 10.1039/c5tc03079j

M3 - Article

VL - 4

SP - 449

EP - 454

JO - Journal of Materials Chemistry. C

JF - Journal of Materials Chemistry. C

SN - 2050-7526

IS - 3

ER -