Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

Karina B Klepper; Kimmo Ville Antero Miikkulainen; Ola Nilsen; Helmer Fjellvåg; Ming Liu; Dhanadeep Dutta; David Gidley; William Lanford; Liza Ross; Han Li; Sean W King

doi:10.1557/opl.2015.519

Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

Karina B Klepper, Kimmo Ville Antero Miikkulainen, Ola Nilsen, Helmer Fjellvåg, Ming Liu, Dhanadeep Dutta, David Gidley, William Lanford, Liza Ross, Han Li, Sean W King

Department of Chemistry

Research output: Contribution to journal › Conference article › Scientific › peer-review

Abstract

The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

Original language	English
Journal	MRS Proceedings
Volume	1791
Pages (from-to)	15-20
Number of pages	6
ISSN	0272-9172
DOIs	https://doi.org/10.1557/opl.2015.519
Publication status	Published - 1 May 2015
MoE publication type	A4 Article in conference proceedings
Event	AVS Topical Conference on Atomic Layer Deposition - Portland, OR, United States Duration: 28 Jun 2015 → 1 Jul 2015 Conference number: 15

Fields of Science

221 Nano-technology

Access to Document

10.1557/opl.2015.519

Cite this

@article{96e5aa58ba734855a5625007b6070538,

title = "Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials",

abstract = "The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young{\textquoteright}s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.",

keywords = "221 Nano-technology, atomic layer deposition, dielectric, Elastic properties",

author = "Klepper, {Karina B} and Miikkulainen, {Kimmo Ville Antero} and Ola Nilsen and Helmer Fjellv{\aa}g and Ming Liu and Dhanadeep Dutta and David Gidley and William Lanford and Liza Ross and Han Li and King, {Sean W}",

note = " Volume: 1791 ; AVS Topical Conference on Atomic Layer Deposition ; Conference date: 28-06-2015 Through 01-07-2015",

year = "2015",

month = may,

day = "1",

doi = "10.1557/opl.2015.519",

language = "English",

volume = "1791",

pages = "15--20",

journal = "MRS Proceedings ",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

AU - Klepper, Karina B

AU - Miikkulainen, Kimmo Ville Antero

AU - Nilsen, Ola

AU - Fjellvåg, Helmer

AU - Liu, Ming

AU - Dutta, Dhanadeep

AU - Gidley, David

AU - Lanford, William

AU - Ross, Liza

AU - Li, Han

AU - King, Sean W

N1 - Conference code: 15

PY - 2015/5/1

Y1 - 2015/5/1

N2 - The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

AB - The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

KW - 221 Nano-technology

KW - atomic layer deposition

KW - dielectric

KW - Elastic properties

U2 - 10.1557/opl.2015.519

DO - 10.1557/opl.2015.519

M3 - Conference article

VL - 1791

SP - 15

EP - 20

JO - MRS Proceedings

JF - MRS Proceedings

SN - 0272-9172

T2 - AVS Topical Conference on Atomic Layer Deposition

Y2 - 28 June 2015 through 1 July 2015

ER -