Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

Karina B Klepper, Kimmo Ville Antero Miikkulainen, Ola Nilsen, Helmer Fjellvåg, Ming Liu, Dhanadeep Dutta, David Gidley, William Lanford, Liza Ross, Han Li, Sean W King

Research output: Contribution to journalConference articleScientificpeer-review


The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.
Original languageEnglish
JournalMRS Proceedings
Pages (from-to)15-20
Number of pages6
Publication statusPublished - 1 May 2015
MoE publication typeA4 Article in conference proceedings
EventAVS Topical Conference on Atomic Layer Deposition - Portland, OR, United States
Duration: 28 Jun 20151 Jul 2015
Conference number: 15

Fields of Science

  • 221 Nano-technology

Cite this