Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Article number025001
JournalAIP Advances
Volume7
Issue number2
Number of pages15
ISSN2158-3226
DOIs
Publication statusPublished - Feb 2017
MoE publication typeA1 Journal article-refereed

Fields of Science

  • OXIDE THIN-FILMS
  • RESISTIVE SWITCHING MEMORIES
  • INSULATOR-METAL STRUCTURES
  • TANTALUM OXIDE
  • ORTHORHOMBIC ZIRCONIA
  • DIELECTRIC-PROPERTIES
  • TETRAGONAL ZIRCONIA
  • RESISTANCE
  • INTERFACE
  • EPITAXY
  • 114 Physical sciences
  • 116 Chemical sciences

Cite this

@article{609c833636ff4f33b96fe519d5c4c8af,
title = "Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films",
keywords = "OXIDE THIN-FILMS, RESISTIVE SWITCHING MEMORIES, INSULATOR-METAL STRUCTURES, TANTALUM OXIDE, ORTHORHOMBIC ZIRCONIA, DIELECTRIC-PROPERTIES, TETRAGONAL ZIRCONIA, RESISTANCE, INTERFACE, EPITAXY, 114 Physical sciences, 116 Chemical sciences",
author = "Kaupo Kukli and Marianna Kemell and Marko Vehkam{\"a}ki and Heikkil{\"a}, {Mikko J.} and Kenichiro Mizohata and Kristjan Kalam and Mikko Ritala and Markku Leskel{\"a} and Ivan Kundrata and Karol Frohlich",
year = "2017",
month = "2",
doi = "10.1063/1.4975928",
language = "English",
volume = "7",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "AVS",
number = "2",

}

Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films. / Kukli, Kaupo; Kemell, Marianna; Vehkamäki, Marko; Heikkilä, Mikko J.; Mizohata, Kenichiro; Kalam, Kristjan; Ritala, Mikko; Leskelä, Markku; Kundrata, Ivan; Frohlich, Karol.

In: AIP Advances, Vol. 7, No. 2, 025001, 02.2017.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

AU - Kukli, Kaupo

AU - Kemell, Marianna

AU - Vehkamäki, Marko

AU - Heikkilä, Mikko J.

AU - Mizohata, Kenichiro

AU - Kalam, Kristjan

AU - Ritala, Mikko

AU - Leskelä, Markku

AU - Kundrata, Ivan

AU - Frohlich, Karol

PY - 2017/2

Y1 - 2017/2

KW - OXIDE THIN-FILMS

KW - RESISTIVE SWITCHING MEMORIES

KW - INSULATOR-METAL STRUCTURES

KW - TANTALUM OXIDE

KW - ORTHORHOMBIC ZIRCONIA

KW - DIELECTRIC-PROPERTIES

KW - TETRAGONAL ZIRCONIA

KW - RESISTANCE

KW - INTERFACE

KW - EPITAXY

KW - 114 Physical sciences

KW - 116 Chemical sciences

U2 - 10.1063/1.4975928

DO - 10.1063/1.4975928

M3 - Article

VL - 7

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 2

M1 - 025001

ER -