Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low-Temperature Film Growth

Miika Mattinen, Timo Hatanpaa, Tiina Sarnet, Kenichiro Mizohata, Kristoffer Meinander, Peter J. King, Leonid Khriachtchev, Jyrki Räisänen, Mikko Ritala, Markku Leskelä

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Article number1700123
JournalAdvanced Materials Interfaces
Volume4
Issue number18
Number of pages11
ISSN2196-7350
DOIs
Publication statusPublished - 22 Sep 2017
MoE publication typeA1 Journal article-refereed

Fields of Science

  • 2D materials
  • atomic layer deposition
  • MoS2
  • thin films
  • TRANSITION-METAL DICHALCOGENIDES
  • CHEMICAL-VAPOR-DEPOSITION
  • ELECTROCHEMICAL HYDROGEN EVOLUTION
  • 2-DIMENSIONAL MATERIALS
  • VALLEY POLARIZATION
  • WAFER-SCALE
  • IN-SITU
  • SULFIDE
  • MONOLAYER
  • RAMAN
  • 116 Chemical sciences
  • 114 Physical sciences

Cite this

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title = "Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low-Temperature Film Growth",
keywords = "2D materials, atomic layer deposition, MoS2, thin films, TRANSITION-METAL DICHALCOGENIDES, CHEMICAL-VAPOR-DEPOSITION, ELECTROCHEMICAL HYDROGEN EVOLUTION, 2-DIMENSIONAL MATERIALS, VALLEY POLARIZATION, WAFER-SCALE, IN-SITU, SULFIDE, MONOLAYER, RAMAN, 116 Chemical sciences, 114 Physical sciences",
author = "Miika Mattinen and Timo Hatanpaa and Tiina Sarnet and Kenichiro Mizohata and Kristoffer Meinander and King, {Peter J.} and Leonid Khriachtchev and Jyrki R{\"a}is{\"a}nen and Mikko Ritala and Markku Leskel{\"a}",
year = "2017",
month = "9",
day = "22",
doi = "10.1002/admi.201700123",
language = "English",
volume = "4",
journal = "Advanced Materials Interfaces",
issn = "2196-7350",
publisher = "Wiley",
number = "18",

}

Atomic Layer Deposition of Crystalline MoS2 Thin Films : New Molybdenum Precursor for Low-Temperature Film Growth. / Mattinen, Miika; Hatanpaa, Timo; Sarnet, Tiina; Mizohata, Kenichiro; Meinander, Kristoffer; King, Peter J.; Khriachtchev, Leonid; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku.

In: Advanced Materials Interfaces , Vol. 4, No. 18, 1700123, 22.09.2017.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Atomic Layer Deposition of Crystalline MoS2 Thin Films

T2 - New Molybdenum Precursor for Low-Temperature Film Growth

AU - Mattinen, Miika

AU - Hatanpaa, Timo

AU - Sarnet, Tiina

AU - Mizohata, Kenichiro

AU - Meinander, Kristoffer

AU - King, Peter J.

AU - Khriachtchev, Leonid

AU - Räisänen, Jyrki

AU - Ritala, Mikko

AU - Leskelä, Markku

PY - 2017/9/22

Y1 - 2017/9/22

KW - 2D materials

KW - atomic layer deposition

KW - MoS2

KW - thin films

KW - TRANSITION-METAL DICHALCOGENIDES

KW - CHEMICAL-VAPOR-DEPOSITION

KW - ELECTROCHEMICAL HYDROGEN EVOLUTION

KW - 2-DIMENSIONAL MATERIALS

KW - VALLEY POLARIZATION

KW - WAFER-SCALE

KW - IN-SITU

KW - SULFIDE

KW - MONOLAYER

KW - RAMAN

KW - 116 Chemical sciences

KW - 114 Physical sciences

U2 - 10.1002/admi.201700123

DO - 10.1002/admi.201700123

M3 - Article

VL - 4

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 18

M1 - 1700123

ER -