Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water

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Abstract

Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl)
amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined with
respect to substrate temperature, precursor doses, and number of ALD cycles. With ozone two
ALD windows were observed, between 80 and 100 C and between 125 and 200 C. The films
grown on soda lime glass and silicon substrates were uniform across the substrates. With the water
process the growth rate at 100–250 C was 0.05–0.18A ° /cycle, and with the ozone process, the
growth rate at 80–200 C was 0.05–0.11A ° /cycle. The films were further studied for composition
and morphology. The films deposited with water showed crystallinity with the tetragonal SnO
phase, and annealing in air increased the conductivity of the films while the SnO2 phase
appeared. All the films deposited with ozone contained silicon as an impurity and were
amorphous and nonconductive both as-deposited and after annealing. The films were further
deposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements.
The TiO2 nanostructure functioned also as a test structure for conformality of the
processes.
Original languageEnglish
Article number041506
JournalJournal of Vacuum Science Technology A: Vacuum, Surfaces, and Films
Volume35
Issue number4
Number of pages8
ISSN1520-8559
DOIs
Publication statusPublished - 30 May 2017
MoE publication typeA1 Journal article-refereed

Fields of Science

  • 116 Chemical sciences

Cite this

@article{f2060d6db33a41c9afde5f792fa7fed1,
title = "Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water",
abstract = "Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined withrespect to substrate temperature, precursor doses, and number of ALD cycles. With ozone twoALD windows were observed, between 80 and 100 C and between 125 and 200 C. The filmsgrown on soda lime glass and silicon substrates were uniform across the substrates. With the waterprocess the growth rate at 100–250 C was 0.05–0.18A ° /cycle, and with the ozone process, thegrowth rate at 80–200 C was 0.05–0.11A ° /cycle. The films were further studied for compositionand morphology. The films deposited with water showed crystallinity with the tetragonal SnOphase, and annealing in air increased the conductivity of the films while the SnO2 phaseappeared. All the films deposited with ozone contained silicon as an impurity and wereamorphous and nonconductive both as-deposited and after annealing. The films were furtherdeposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements.The TiO2 nanostructure functioned also as a test structure for conformality of theprocesses.",
keywords = "116 Chemical sciences",
author = "Tupala, {Jere Olavi} and Kemell, {Marianna Leena} and Mattinen, {Miika Juhana} and Meinander, {Nils Kristoffer} and Sepp{\"a}l{\"a}, {Sanni Sinikka} and Hatanp{\"a}{\"a}, {Timo Tapio} and R{\"a}is{\"a}nen, {Jyrki Antero} and Ritala, {Mikko Kalervo} and Leskel{\"a}, {Markku Antero}",
year = "2017",
month = "5",
day = "30",
doi = "10.1116/1.4984279",
language = "English",
volume = "35",
journal = "Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films",
issn = "1520-8559",
publisher = "Published for the American Vacuum Society by the American Institute of Physics",
number = "4",

}

TY - JOUR

T1 - Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water

AU - Tupala, Jere Olavi

AU - Kemell, Marianna Leena

AU - Mattinen, Miika Juhana

AU - Meinander, Nils Kristoffer

AU - Seppälä, Sanni Sinikka

AU - Hatanpää, Timo Tapio

AU - Räisänen, Jyrki Antero

AU - Ritala, Mikko Kalervo

AU - Leskelä, Markku Antero

PY - 2017/5/30

Y1 - 2017/5/30

N2 - Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined withrespect to substrate temperature, precursor doses, and number of ALD cycles. With ozone twoALD windows were observed, between 80 and 100 C and between 125 and 200 C. The filmsgrown on soda lime glass and silicon substrates were uniform across the substrates. With the waterprocess the growth rate at 100–250 C was 0.05–0.18A ° /cycle, and with the ozone process, thegrowth rate at 80–200 C was 0.05–0.11A ° /cycle. The films were further studied for compositionand morphology. The films deposited with water showed crystallinity with the tetragonal SnOphase, and annealing in air increased the conductivity of the films while the SnO2 phaseappeared. All the films deposited with ozone contained silicon as an impurity and wereamorphous and nonconductive both as-deposited and after annealing. The films were furtherdeposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements.The TiO2 nanostructure functioned also as a test structure for conformality of theprocesses.

AB - Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined withrespect to substrate temperature, precursor doses, and number of ALD cycles. With ozone twoALD windows were observed, between 80 and 100 C and between 125 and 200 C. The filmsgrown on soda lime glass and silicon substrates were uniform across the substrates. With the waterprocess the growth rate at 100–250 C was 0.05–0.18A ° /cycle, and with the ozone process, thegrowth rate at 80–200 C was 0.05–0.11A ° /cycle. The films were further studied for compositionand morphology. The films deposited with water showed crystallinity with the tetragonal SnOphase, and annealing in air increased the conductivity of the films while the SnO2 phaseappeared. All the films deposited with ozone contained silicon as an impurity and wereamorphous and nonconductive both as-deposited and after annealing. The films were furtherdeposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements.The TiO2 nanostructure functioned also as a test structure for conformality of theprocesses.

KW - 116 Chemical sciences

U2 - 10.1116/1.4984279

DO - 10.1116/1.4984279

M3 - Article

VL - 35

JO - Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films

JF - Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films

SN - 1520-8559

IS - 4

M1 - 041506

ER -