Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationConference Papers : 4th International Conference on Materials for Microelectronics and Nanoengineering
    Publication date2002
    Pages97-100
    Publication statusPublished - 2002
    MoE publication typeA4 Article in conference proceedings
    Event4th International Conference on Materials for Microelectronics and Nanoengineering - Espoo, Finland
    Duration: 1 Jan 1800 → …
    Conference number: 4

    Fields of Science

    • 116 Chemical sciences

    Cite this

    Kukli, K., Ritala, M., & Leskelä, M. (2002). Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics. In Conference Papers : 4th International Conference on Materials for Microelectronics and Nanoengineering (pp. 97-100)
    Kukli, Kaupo ; Ritala, Mikko ; Leskelä, Markku. / Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics. Conference Papers : 4th International Conference on Materials for Microelectronics and Nanoengineering . 2002. pp. 97-100
    @inproceedings{1225e44247d445e99c746b58e9b7c76c,
    title = "Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics",
    keywords = "116 Chemical sciences",
    author = "Kaupo Kukli and Mikko Ritala and Markku Leskel{\"a}",
    note = "Volume: Proceeding volume:",
    year = "2002",
    language = "English",
    pages = "97--100",
    booktitle = "Conference Papers",

    }

    Kukli, K, Ritala, M & Leskelä, M 2002, Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics. in Conference Papers : 4th International Conference on Materials for Microelectronics and Nanoengineering . pp. 97-100, 4th International Conference on Materials for Microelectronics and Nanoengineering , Espoo, Finland, 01/01/1800.

    Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics. / Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku.

    Conference Papers : 4th International Conference on Materials for Microelectronics and Nanoengineering . 2002. p. 97-100.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    TY - GEN

    T1 - Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics

    AU - Kukli, Kaupo

    AU - Ritala, Mikko

    AU - Leskelä, Markku

    N1 - Volume: Proceeding volume:

    PY - 2002

    Y1 - 2002

    KW - 116 Chemical sciences

    M3 - Conference contribution

    SP - 97

    EP - 100

    BT - Conference Papers

    ER -

    Kukli K, Ritala M, Leskelä M. Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics. In Conference Papers : 4th International Conference on Materials for Microelectronics and Nanoengineering . 2002. p. 97-100