Defect and density evolution under high-fluence ion irradiation of Si/SiO2 heterostructures

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Article number013601
JournalPhysical Review Materials
Volume4
Issue number1
Number of pages12
ISSN2475-9953
DOIs
Publication statusPublished - 3 Jan 2020
MoE publication typeA1 Journal article-refereed

Fields of Science

  • SINGLE-ELECTRON TRANSISTOR
  • SILICON QUANTUM-DOT
  • MOLECULAR-DYNAMICS
  • SI NANOCRYSTALS
  • NANOCLUSTER FORMATION
  • LAYER FORMATION
  • BEAM SYNTHESIS
  • SIMULATION
  • RADIATION
  • DENSIFICATION
  • 114 Physical sciences

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