Defect identification in semiconductors with positron annihilation: Experiment and theory

Research output: Contribution to journalReview Articlepeer-review

Original languageEnglish
JournalReviews of Modern Physics
Volume85
Issue number4
Pages (from-to)1583-1631
Number of pages49
ISSN0034-6861
DOIs
Publication statusPublished - 14 Nov 2013
MoE publication typeA2 Review article in a scientific journal

Fields of Science

  • MOLECULAR-BEAM EPITAXY
  • ELECTRONIC-STRUCTURE CALCULATIONS
  • DENSITY-FUNCTIONAL THEORY
  • TEMPERATURE-GROWN GAAS
  • ARSENIC-DOPED SILICON
  • AUGMENTED-WAVE METHOD
  • VACANCY-TYPE DEFECTS
  • 2-DIMENSIONAL ANGULAR-CORRELATION
  • NORM-CONSERVING PSEUDOPOTENTIALS
  • PERIODIC BOUNDARY-CONDITIONS
  • 114 Physical sciences

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