@article{c3a6d396f47c43189c0cdd3f550fc49d,
title = "Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon",
keywords = "High-quality aln, Thin-films, Ain films, Oxygen, Power, Gan, Algan, Growth, Rf, 114 Physical sciences",
author = "Heli Sepp{\"a}nen and Igor Prozheev and Christoffer Kauppinen and Sami Suihkonen and Kenichiro Mizohata and Harri Lipsanen",
year = "2023",
month = sep,
doi = "10.1116/6.0002705",
language = "English",
volume = "41",
journal = "Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films",
issn = "0734-2101",
publisher = "Published for the American Vacuum Society by the American Institute of Physics",
number = "5",
}