Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

H. García, S. Dueñas, H. Castán, A. Gómez, L. Bailón, T. Hatanpää, J. Aarik, A. Aidla, M. Ritala, M. Leskelä

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationProceedings of the 2009 Spanish Conference on Electron Devices
    PublisherIEEE
    Publication date2009
    Pages223-226
    ISBN (Print)978-1-4244-2839-7
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA4 Article in conference proceedings
    EventThe 7th Spanish Conference on Electron Devices - Santiago de Compostela, Spain
    Duration: 11 Feb 200913 Feb 2009

    Fields of Science

    • 116 Chemical sciences

    Cite this

    García, H., Dueñas, S., Castán, H., Gómez, A., Bailón, L., Hatanpää, T., ... Leskelä, M. (2009). Electrical characterization of high-k based MIS capacitors using flat-band voltage transients. In Proceedings of the 2009 Spanish Conference on Electron Devices (pp. 223-226). IEEE. https://doi.org/10.1109/SCED.2009.4800471
    García, H. ; Dueñas, S. ; Castán, H. ; Gómez, A. ; Bailón, L. ; Hatanpää, T. ; Aarik, J. ; Aidla, A. ; Ritala, M. ; Leskelä, M. / Electrical characterization of high-k based MIS capacitors using flat-band voltage transients. Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, 2009. pp. 223-226
    @inproceedings{0d7cc40acb014df6a2c0c83652eabcc0,
    title = "Electrical characterization of high-k based MIS capacitors using flat-band voltage transients",
    keywords = "116 Chemical sciences",
    author = "H. Garc{\'i}a and S. Due{\~n}as and H. Cast{\'a}n and A. G{\'o}mez and L. Bail{\'o}n and T. Hatanp{\"a}{\"a} and J. Aarik and A. Aidla and M. Ritala and M. Leskel{\"a}",
    note = "Volume: Proceeding volume:",
    year = "2009",
    doi = "10.1109/SCED.2009.4800471",
    language = "English",
    isbn = "978-1-4244-2839-7",
    pages = "223--226",
    booktitle = "Proceedings of the 2009 Spanish Conference on Electron Devices",
    publisher = "IEEE",
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    }

    García, H, Dueñas, S, Castán, H, Gómez, A, Bailón, L, Hatanpää, T, Aarik, J, Aidla, A, Ritala, M & Leskelä, M 2009, Electrical characterization of high-k based MIS capacitors using flat-band voltage transients. in Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, pp. 223-226, The 7th Spanish Conference on Electron Devices, Santiago de Compostela, Spain, 11/02/2009. https://doi.org/10.1109/SCED.2009.4800471

    Electrical characterization of high-k based MIS capacitors using flat-band voltage transients. / García, H.; Dueñas, S.; Castán, H.; Gómez, A.; Bailón, L.; Hatanpää, T.; Aarik, J.; Aidla, A.; Ritala, M.; Leskelä, M.

    Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, 2009. p. 223-226.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    TY - GEN

    T1 - Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

    AU - García, H.

    AU - Dueñas, S.

    AU - Castán, H.

    AU - Gómez, A.

    AU - Bailón, L.

    AU - Hatanpää, T.

    AU - Aarik, J.

    AU - Aidla, A.

    AU - Ritala, M.

    AU - Leskelä, M.

    N1 - Volume: Proceeding volume:

    PY - 2009

    Y1 - 2009

    KW - 116 Chemical sciences

    U2 - 10.1109/SCED.2009.4800471

    DO - 10.1109/SCED.2009.4800471

    M3 - Conference contribution

    SN - 978-1-4244-2839-7

    SP - 223

    EP - 226

    BT - Proceedings of the 2009 Spanish Conference on Electron Devices

    PB - IEEE

    ER -

    García H, Dueñas S, Castán H, Gómez A, Bailón L, Hatanpää T et al. Electrical characterization of high-k based MIS capacitors using flat-band voltage transients. In Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE. 2009. p. 223-226 https://doi.org/10.1109/SCED.2009.4800471