Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates

A. Gómez, S. Dueñas, H. Castán, H. García, L. Bailón, K. Kukli, J. Niinistö, M. Ritala, M. Leskelä

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationProceedings of the 2009 Spanish Conference on Electron Devices
    Number of pages4
    PublisherIEEE
    Publication date2009
    Pages227-230
    ISBN (Print)978-1-4244-2839-7
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA4 Article in conference proceedings
    EventSpanish Conference on Electron Devices, 2009 - Valladolid, Spain
    Duration: 11 Feb 200913 Feb 2009
    Conference number: CDE 2009

    Fields of Science

    • 116 Chemical sciences

    Cite this

    Gómez, A., Dueñas, S., Castán, H., García, H., Bailón, L., Kukli, K., ... Leskelä, M. (2009). Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates. In Proceedings of the 2009 Spanish Conference on Electron Devices (pp. 227-230). IEEE. https://doi.org/10.1109/SCED.2009.4800472
    Gómez, A. ; Dueñas, S. ; Castán, H. ; García, H. ; Bailón, L. ; Kukli, K. ; Niinistö, J. ; Ritala, M. ; Leskelä, M. / Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates. Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, 2009. pp. 227-230
    @inproceedings{f16e89c5286640ad8de9e9a5ae91304f,
    title = "Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates",
    keywords = "116 Chemical sciences",
    author = "A. G{\'o}mez and S. Due{\~n}as and H. Cast{\'a}n and H. Garc{\'i}a and L. Bail{\'o}n and K. Kukli and J. Niinist{\"o} and M. Ritala and M. Leskel{\"a}",
    note = "Volume: Proceeding volume:",
    year = "2009",
    doi = "10.1109/SCED.2009.4800472",
    language = "English",
    isbn = "978-1-4244-2839-7",
    pages = "227--230",
    booktitle = "Proceedings of the 2009 Spanish Conference on Electron Devices",
    publisher = "IEEE",
    address = "International",

    }

    Gómez, A, Dueñas, S, Castán, H, García, H, Bailón, L, Kukli, K, Niinistö, J, Ritala, M & Leskelä, M 2009, Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates. in Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, pp. 227-230, Spanish Conference on Electron Devices, 2009, Valladolid, Spain, 11/02/2009. https://doi.org/10.1109/SCED.2009.4800472

    Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates. / Gómez, A.; Dueñas, S.; Castán, H.; García, H.; Bailón, L.; Kukli, K.; Niinistö, J.; Ritala, M.; Leskelä, M.

    Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, 2009. p. 227-230.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    TY - GEN

    T1 - Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates

    AU - Gómez, A.

    AU - Dueñas, S.

    AU - Castán, H.

    AU - García, H.

    AU - Bailón, L.

    AU - Kukli, K.

    AU - Niinistö, J.

    AU - Ritala, M.

    AU - Leskelä, M.

    N1 - Volume: Proceeding volume:

    PY - 2009

    Y1 - 2009

    KW - 116 Chemical sciences

    U2 - 10.1109/SCED.2009.4800472

    DO - 10.1109/SCED.2009.4800472

    M3 - Conference contribution

    SN - 978-1-4244-2839-7

    SP - 227

    EP - 230

    BT - Proceedings of the 2009 Spanish Conference on Electron Devices

    PB - IEEE

    ER -

    Gómez A, Dueñas S, Castán H, García H, Bailón L, Kukli K et al. Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates. In Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE. 2009. p. 227-230 https://doi.org/10.1109/SCED.2009.4800472