Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

I. Prozheev; F. Mehnke; T. Wernicke; M. Kneissl; F. Tuomisto

doi:10.1063/5.0016494

Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

I. Prozheev, F. Mehnke, T. Wernicke, M. Kneissl, F. Tuomisto

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Article number	142103
Journal	Applied Physics Letters
Volume	117
Issue number	14
Number of pages	5
ISSN	0003-6951
DOIs	https://doi.org/10.1063/5.0016494
Publication status	Published - 5 Oct 2020
MoE publication type	A1 Journal article-refereed

Fields of Science

GA VACANCIES
114 Physical sciences

Access to Document

10.1063/5.0016494

5.0016494Final published version, 967 KBLicence: Unspecified

1st Best Poster Prize
Prozheev, I. (Recipient), 20 Jul 2023
Prize: Prizes and awards
Haller Prize
Prozheev, I. (Recipient), 14 Sept 2023
Prize: Prizes and awards

Cite this

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title = "Electrical compensation and cation vacancies in Al rich Si-doped AlGaN",

keywords = "GA VACANCIES, 114 Physical sciences",

author = "I. Prozheev and F. Mehnke and T. Wernicke and M. Kneissl and F. Tuomisto",

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volume = "117",

journal = "Applied Physics Letters",

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T1 - Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

AU - Prozheev, I.

AU - Mehnke, F.

AU - Wernicke, T.

AU - Kneissl, M.

AU - Tuomisto, F.

PY - 2020/10/5

Y1 - 2020/10/5

KW - GA VACANCIES

KW - 114 Physical sciences

U2 - 10.1063/5.0016494

DO - 10.1063/5.0016494

M3 - Article

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VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142103

ER -

Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

Fields of Science

Access to Document

Prizes

1st Best Poster Prize

Haller Prize

Cite this