@article{2661f3631c734b6cba80e13f1f024ba8,
title = "Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method",
keywords = "Molecular beam epitaxy, Ion-assisted deposition, STM, Atomic cascades, Radiation effects, DOTS, IRRADIATION, SURFACE, SI(001), RHEED, 114 Physical sciences",
author = "Ashurov, {Kh B.} and F. Djurabekova and Maksimov, {S. E.} and Nikiforov, {A. I.} and S. Tadjirnuratov and Oksengendler, {B. L.}",
year = "2012",
doi = "10.1016/j.nimb.2011.08.059",
language = "English",
volume = "282",
pages = "38--42",
journal = "Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier B.V.",
}