Evidence for native-defect donors in n-type ZnO

D. C Look, G. C Farlew, Pakpoom Reunchan, Sukit Limpijumnong, S. B Zhang, Kai Nordlund

    Research output: Contribution to journalArticleScientificpeer-review


    Recent theory has found that native defects such as the O vacancy V-O and Zn interstitial Zn-I have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory and experiment to show that, under N ambient, the complex Zn-I-N-O is a stronger candidate than H or any other known impurity for a 30 meV donor commonly found in bulk ZnO grown from the vapor phase. Since the Zn vacancy is also the dominant acceptor in such material, we must conclude that native defects are important donors and acceptors in ZnO.
    Original languageEnglish
    JournalPhysical Review Letters
    Issue number22
    Pages (from-to)225502
    Number of pages4
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Fields of Science

    • 114 Physical sciences

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