HYDROGEN-IMPLANTATION-INDUCED DAMAGE IN SILICON

J KEINONEN, M HAUTALA, E RAUHALA, M EROLA, J LAHTINEN, H HUOMO, A VEHANEN, P HAUTOJARVI

Research output: Contribution to journal › Article › Scientific

Original language	English
Journal	Physical Review. B, Condensed Matter
Volume	36
Issue number	2
Pages (from-to)	1344-1347
Number of pages	4
ISSN	0163-1829
Publication status	Published - 15 Jul 1987
MoE publication type	B1 Journal article

Cite this

@article{2b49b0639d474fa7b647d69246299c44,

title = "HYDROGEN-IMPLANTATION-INDUCED DAMAGE IN SILICON",

author = "J KEINONEN and M HAUTALA and E RAUHALA and M EROLA and J LAHTINEN and H HUOMO and A VEHANEN and P HAUTOJARVI",

year = "1987",

month = jul,

day = "15",

language = "English",

volume = "36",

pages = "1344--1347",

journal = "Physical Review. B, Condensed Matter",

issn = "0163-1829",

publisher = "American Physical Society ",

number = "2",

}

TY - JOUR

T1 - HYDROGEN-IMPLANTATION-INDUCED DAMAGE IN SILICON

AU - KEINONEN, J

AU - HAUTALA, M

AU - RAUHALA, E

AU - EROLA, M

AU - LAHTINEN, J

AU - HUOMO, H

AU - VEHANEN, A

AU - HAUTOJARVI, P

PY - 1987/7/15

Y1 - 1987/7/15

M3 - Article

SN - 0163-1829

VL - 36

SP - 1344

EP - 1347

JO - Physical Review. B, Condensed Matter

JF - Physical Review. B, Condensed Matter

IS - 2

ER -