In-grown and irradiation-induced Al and N vacancies in 100 keV H+ implanted AlN single crystals

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Article number071001
JournalJapanese journal of applied physics part 1-Regular papers short notes & review papers
Volume63
Issue number7
Number of pages6
ISSN0021-4922
DOIs
Publication statusPublished - 1 Jul 2024
MoE publication typeA1 Journal article-refereed

Fields of Science

  • Defects
  • Nitrides
  • Positron annihilation
  • Semiconductors
  • 114 Physical sciences
  • 221 Nano-technology
  • 216 Materials engineering

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