(Invited) Photo-Assisted ALD

Process Development and Application Perspectives

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Atomic layer deposition (ALD) is a highly versatile thin-film deposition method that is presently utilized in many steps within microelectronic process flow and is gaining more and more interest in other fields of industry as well. The prosperity of ALD originates from its capability to controllably deposit high-quality films uniformly and conformally over large areas and complicated features. However, one of the main challenges of ALD, lateral control of film growth, stems from these same properties. Selective-area ALD (S-ALD) is presently a subject of intense research and development work as the targeted feature sizes in the semiconductor applications have reduced to a level exceeding the capabilities of lithography methods. Photo-assisted ALD (Photo-ALD) is a less-studied approach to facilitate S-ALD and selection of materials accessible with Photo-ALD is scarce. The present paper contributes to this field by reporting studies on Photo-ALD processes for metal oxides and metals.
Original languageEnglish
JournalECS transactions
Volume80
Issue number3
Pages (from-to)49-60
Number of pages12
ISSN1938-5862
DOIs
Publication statusPublished - 2017
MoE publication typeA1 Journal article-refereed

Fields of Science

  • 114 Physical sciences

Cite this

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title = "(Invited) Photo-Assisted ALD: Process Development and Application Perspectives",
abstract = "Atomic layer deposition (ALD) is a highly versatile thin-film deposition method that is presently utilized in many steps within microelectronic process flow and is gaining more and more interest in other fields of industry as well. The prosperity of ALD originates from its capability to controllably deposit high-quality films uniformly and conformally over large areas and complicated features. However, one of the main challenges of ALD, lateral control of film growth, stems from these same properties. Selective-area ALD (S-ALD) is presently a subject of intense research and development work as the targeted feature sizes in the semiconductor applications have reduced to a level exceeding the capabilities of lithography methods. Photo-assisted ALD (Photo-ALD) is a less-studied approach to facilitate S-ALD and selection of materials accessible with Photo-ALD is scarce. The present paper contributes to this field by reporting studies on Photo-ALD processes for metal oxides and metals.",
keywords = "114 Physical sciences",
author = "Ville Miikkulainen and Katja V{\"a}yrynen and V{\"a}in{\"o} Kilpi and Zhongmei Han and Marko Vehkam{\"a}ki and Kenichiro Mizohata and Jyrki R{\"a}is{\"a}nen and Mikko Ritala",
year = "2017",
doi = "10.1149/08003.0049ecst",
language = "English",
volume = "80",
pages = "49--60",
journal = "ECS transactions",
issn = "1938-5862",
publisher = "Electrochemical Society, Inc",
number = "3",

}

(Invited) Photo-Assisted ALD : Process Development and Application Perspectives. / Miikkulainen, Ville; Väyrynen, Katja; Kilpi, Väinö; Han, Zhongmei; Vehkamäki, Marko; Mizohata, Kenichiro; Räisänen, Jyrki; Ritala, Mikko.

In: ECS transactions, Vol. 80, No. 3, 2017, p. 49-60.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - (Invited) Photo-Assisted ALD

T2 - Process Development and Application Perspectives

AU - Miikkulainen, Ville

AU - Väyrynen, Katja

AU - Kilpi, Väinö

AU - Han, Zhongmei

AU - Vehkamäki, Marko

AU - Mizohata, Kenichiro

AU - Räisänen, Jyrki

AU - Ritala, Mikko

PY - 2017

Y1 - 2017

N2 - Atomic layer deposition (ALD) is a highly versatile thin-film deposition method that is presently utilized in many steps within microelectronic process flow and is gaining more and more interest in other fields of industry as well. The prosperity of ALD originates from its capability to controllably deposit high-quality films uniformly and conformally over large areas and complicated features. However, one of the main challenges of ALD, lateral control of film growth, stems from these same properties. Selective-area ALD (S-ALD) is presently a subject of intense research and development work as the targeted feature sizes in the semiconductor applications have reduced to a level exceeding the capabilities of lithography methods. Photo-assisted ALD (Photo-ALD) is a less-studied approach to facilitate S-ALD and selection of materials accessible with Photo-ALD is scarce. The present paper contributes to this field by reporting studies on Photo-ALD processes for metal oxides and metals.

AB - Atomic layer deposition (ALD) is a highly versatile thin-film deposition method that is presently utilized in many steps within microelectronic process flow and is gaining more and more interest in other fields of industry as well. The prosperity of ALD originates from its capability to controllably deposit high-quality films uniformly and conformally over large areas and complicated features. However, one of the main challenges of ALD, lateral control of film growth, stems from these same properties. Selective-area ALD (S-ALD) is presently a subject of intense research and development work as the targeted feature sizes in the semiconductor applications have reduced to a level exceeding the capabilities of lithography methods. Photo-assisted ALD (Photo-ALD) is a less-studied approach to facilitate S-ALD and selection of materials accessible with Photo-ALD is scarce. The present paper contributes to this field by reporting studies on Photo-ALD processes for metal oxides and metals.

KW - 114 Physical sciences

U2 - 10.1149/08003.0049ecst

DO - 10.1149/08003.0049ecst

M3 - Article

VL - 80

SP - 49

EP - 60

JO - ECS transactions

JF - ECS transactions

SN - 1938-5862

IS - 3

ER -