Light and heavy ion effects on damage clustering in GaAs quantum wells

Carolina Björkas, Kai Nordlund, Kai Arstila, Juhani Keinonen, V. D. S Dhaka, M Pessa

    Research output: Contribution to journalConference articleScientificpeer-review

    Abstract

    Recent experiments have shown that ion irradiation can strongly affect charge carrier dynamics in GaAs quantum wells. The irradiation conditions are such that the ions penetrate deep beyond the active layer, showing that the effect is due to damage in the lattice. Moreover, ions of different mass and energy can lead to clearly different effects even after normalization with the nuclear deposited energy. Using molecular dynamics simulation of the damage production, we show that the experimentally observed effects on charge carrier lifetime correlate well with the production of large (more than 100 disordered atoms) damage clusters. Moreover, we show that 400 keV Ne and 10 MeV Ni produce very similar damage in the near-surface active regions, indicating that 500 kV ion implanters are sufficient to achieve the desired modification effects. (c) 2007 Elsevier B.V. All rights reserved.
    Original languageEnglish
    JournalNuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume257
    Issue number1-2
    Pages (from-to)324-327
    Number of pages4
    ISSN0168-583X
    DOIs
    Publication statusPublished - 2007
    MoE publication typeA4 Article in conference proceedings
    EventUnknown host publication - , Netherlands
    Duration: 1 Jan 1800 → …

    Cite this

    @article{7ff51ff2b6154c9b807ee9008c8b73ad,
    title = "Light and heavy ion effects on damage clustering in GaAs quantum wells",
    abstract = "Recent experiments have shown that ion irradiation can strongly affect charge carrier dynamics in GaAs quantum wells. The irradiation conditions are such that the ions penetrate deep beyond the active layer, showing that the effect is due to damage in the lattice. Moreover, ions of different mass and energy can lead to clearly different effects even after normalization with the nuclear deposited energy. Using molecular dynamics simulation of the damage production, we show that the experimentally observed effects on charge carrier lifetime correlate well with the production of large (more than 100 disordered atoms) damage clusters. Moreover, we show that 400 keV Ne and 10 MeV Ni produce very similar damage in the near-surface active regions, indicating that 500 kV ion implanters are sufficient to achieve the desired modification effects. (c) 2007 Elsevier B.V. All rights reserved.",
    author = "Carolina Bj{\"o}rkas and Kai Nordlund and Kai Arstila and Juhani Keinonen and Dhaka, {V. D. S} and M Pessa",
    note = "Volume: 257 Host publication title: 15th International Conference on Ion Beam Modification of Materials Proceeding volume:",
    year = "2007",
    doi = "10.1016/j.nimb.2007.01.029",
    language = "English",
    volume = "257",
    pages = "324--327",
    journal = "Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
    issn = "0168-583X",
    publisher = "Elsevier",
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    Light and heavy ion effects on damage clustering in GaAs quantum wells. / Björkas, Carolina; Nordlund, Kai; Arstila, Kai; Keinonen, Juhani; Dhaka, V. D. S; Pessa, M.

    In: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 257, No. 1-2, 2007, p. 324-327.

    Research output: Contribution to journalConference articleScientificpeer-review

    TY - JOUR

    T1 - Light and heavy ion effects on damage clustering in GaAs quantum wells

    AU - Björkas, Carolina

    AU - Nordlund, Kai

    AU - Arstila, Kai

    AU - Keinonen, Juhani

    AU - Dhaka, V. D. S

    AU - Pessa, M

    N1 - Volume: 257 Host publication title: 15th International Conference on Ion Beam Modification of Materials Proceeding volume:

    PY - 2007

    Y1 - 2007

    N2 - Recent experiments have shown that ion irradiation can strongly affect charge carrier dynamics in GaAs quantum wells. The irradiation conditions are such that the ions penetrate deep beyond the active layer, showing that the effect is due to damage in the lattice. Moreover, ions of different mass and energy can lead to clearly different effects even after normalization with the nuclear deposited energy. Using molecular dynamics simulation of the damage production, we show that the experimentally observed effects on charge carrier lifetime correlate well with the production of large (more than 100 disordered atoms) damage clusters. Moreover, we show that 400 keV Ne and 10 MeV Ni produce very similar damage in the near-surface active regions, indicating that 500 kV ion implanters are sufficient to achieve the desired modification effects. (c) 2007 Elsevier B.V. All rights reserved.

    AB - Recent experiments have shown that ion irradiation can strongly affect charge carrier dynamics in GaAs quantum wells. The irradiation conditions are such that the ions penetrate deep beyond the active layer, showing that the effect is due to damage in the lattice. Moreover, ions of different mass and energy can lead to clearly different effects even after normalization with the nuclear deposited energy. Using molecular dynamics simulation of the damage production, we show that the experimentally observed effects on charge carrier lifetime correlate well with the production of large (more than 100 disordered atoms) damage clusters. Moreover, we show that 400 keV Ne and 10 MeV Ni produce very similar damage in the near-surface active regions, indicating that 500 kV ion implanters are sufficient to achieve the desired modification effects. (c) 2007 Elsevier B.V. All rights reserved.

    U2 - 10.1016/j.nimb.2007.01.029

    DO - 10.1016/j.nimb.2007.01.029

    M3 - Conference article

    VL - 257

    SP - 324

    EP - 327

    JO - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

    JF - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

    SN - 0168-583X

    IS - 1-2

    ER -