Low-temperature atomic layer deposition of copper(II) oxide thin films

Tomi Iivonen, Jani Hämäläinen, Benoit Marchand, Kenichiro Mizohata, Miika Mattinen, Georgi Popov, Jiyeon Kim, Roland A. Fischer, Markku Leskelä

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature window of 80–140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV‐Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2–0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.
Original languageEnglish
Article number01A109
JournalJournal of vacuum science & technology : an official journal of the American Vacuum Society
Volume34
Issue number1
ISSN0734-2101
DOIs
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed

Fields of Science

  • 114 Physical sciences
  • 116 Chemical sciences

Cite this

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title = "Low-temperature atomic layer deposition of copper(II) oxide thin films",
abstract = "Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature window of 80–140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV‐Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2–0.3 {\AA} per cycle. Impurity content in the films was relatively small for a low temperature ALD process.",
keywords = "114 Physical sciences, 116 Chemical sciences",
author = "Tomi Iivonen and Jani H{\"a}m{\"a}l{\"a}inen and Benoit Marchand and Kenichiro Mizohata and Miika Mattinen and Georgi Popov and Jiyeon Kim and Fischer, {Roland A.} and Markku Leskel{\"a}",
year = "2016",
doi = "10.1116/1.4933089",
language = "English",
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journal = "Journal of vacuum science & technology : an official journal of the American Vacuum Society",
issn = "0734-2101",
publisher = "AVS",
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Low-temperature atomic layer deposition of copper(II) oxide thin films. / Iivonen, Tomi; Hämäläinen, Jani; Marchand, Benoit; Mizohata, Kenichiro; Mattinen, Miika; Popov, Georgi; Kim, Jiyeon ; Fischer, Roland A. ; Leskelä, Markku.

In: Journal of vacuum science & technology : an official journal of the American Vacuum Society, Vol. 34, No. 1, 01A109, 2016.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Low-temperature atomic layer deposition of copper(II) oxide thin films

AU - Iivonen, Tomi

AU - Hämäläinen, Jani

AU - Marchand, Benoit

AU - Mizohata, Kenichiro

AU - Mattinen, Miika

AU - Popov, Georgi

AU - Kim, Jiyeon

AU - Fischer, Roland A.

AU - Leskelä, Markku

PY - 2016

Y1 - 2016

N2 - Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature window of 80–140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV‐Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2–0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.

AB - Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature window of 80–140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV‐Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2–0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.

KW - 114 Physical sciences

KW - 116 Chemical sciences

U2 - 10.1116/1.4933089

DO - 10.1116/1.4933089

M3 - Article

VL - 34

JO - Journal of vacuum science & technology : an official journal of the American Vacuum Society

JF - Journal of vacuum science & technology : an official journal of the American Vacuum Society

SN - 0734-2101

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