Memory maps: Reading RRAM devices without power consumption

S. Dueñas, H. Castán, K. Kukli, M. Mikko, K. Kalam, T. Arroval, A. Tamm

    Research output: Contribution to journalConference articleScientificpeer-review


    A comparative study of MIM-RRAM structures with different insulator materials is presented. Admittance memory mapping was carried out at 0 V dc bias, revealing two clearly separated states, both in terms of conductance and susceptance. The memory in the ON state can be modeled by means of a two parameter (resistance and inductance) equivalent circuit. The parameter extraction provides memory maps for the resistance and the inductance as well. The transition shapes between the ON an OFF state are different for each structure due to specific physical mechanisms. © The Electrochemical Society.
    Original languageEnglish
    JournalECS transactions
    Issue number8
    Pages (from-to)201-205
    Number of pages5
    Publication statusPublished - 2018
    MoE publication typeA4 Article in conference proceedings
    EventECS Meeting: Advanced CMOS-Compatible Semiconductor Devices 18 - Seattle, United States
    Duration: 13 May 201817 May 2018
    Conference number: 233

    Bibliographical note


    Fields of Science

    • Electric power utilization
    • Equivalent circuits
    • Inductance
    • RRAM, Comparative studies
    • Insulator materials
    • Memory map
    • Memory mapping
    • Off state
    • Physical mechanism
    • Resistance and inductance
    • Two parameter, Semiconductor devices
    • 116 Chemical sciences

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