On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films

Salvador Dueñas, Helena Castán, Héctor Garcia, Juan Barbolla, Kaupo Kukli, Mikko Ritala, Markku Leskelä

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium Proceedings
    Number of pages6
    Publication date2004
    Pages147
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA4 Article in conference proceedings

    Publication series

    NameMaterials Research Society Online Proceedings Library
    Volume786

    Fields of Science

    • 116 Chemical sciences

    Cite this

    Dueñas, S., Castán, H., Garcia, H., Barbolla, J., Kukli, K., Ritala, M., & Leskelä, M. (2004). On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. In Materials Research Society Symposium Proceedings (pp. 147 ). (Materials Research Society Online Proceedings Library; Vol. 786). https://doi.org/10.1557/PROC-786-E3.18