On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films

Salvador Dueñas, Helena Castán, Héctor Garcia, Juan Barbolla, Kaupo Kukli, Mikko Ritala, Markku Leskelä

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium Proceedings
    Number of pages6
    Publication date2004
    Pages147
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA4 Article in conference proceedings

    Publication series

    NameMaterials Research Society Online Proceedings Library
    Volume786

    Fields of Science

    • 116 Chemical sciences

    Cite this

    Dueñas, S., Castán, H., Garcia, H., Barbolla, J., Kukli, K., Ritala, M., & Leskelä, M. (2004). On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. In Materials Research Society Symposium Proceedings (pp. 147 ). (Materials Research Society Online Proceedings Library; Vol. 786). https://doi.org/10.1557/PROC-786-E3.18
    Dueñas, Salvador ; Castán, Helena ; Garcia, Héctor ; Barbolla, Juan ; Kukli, Kaupo ; Ritala, Mikko ; Leskelä, Markku. / On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. Materials Research Society Symposium Proceedings . 2004. pp. 147 (Materials Research Society Online Proceedings Library).
    @inproceedings{dfaa2c84ee9a4e84a484948db17fddd8,
    title = "On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films",
    keywords = "116 Chemical sciences",
    author = "Salvador Due{\~n}as and Helena Cast{\'a}n and H{\'e}ctor Garcia and Juan Barbolla and Kaupo Kukli and Mikko Ritala and Markku Leskel{\"a}",
    note = "Volume: Proceeding volume:",
    year = "2004",
    doi = "10.1557/PROC-786-E3.18",
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    series = "Materials Research Society Online Proceedings Library",
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    Dueñas, S, Castán, H, Garcia, H, Barbolla, J, Kukli, K, Ritala, M & Leskelä, M 2004, On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. in Materials Research Society Symposium Proceedings . Materials Research Society Online Proceedings Library, vol. 786, pp. 147 . https://doi.org/10.1557/PROC-786-E3.18

    On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. / Dueñas, Salvador; Castán, Helena; Garcia, Héctor; Barbolla, Juan; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku.

    Materials Research Society Symposium Proceedings . 2004. p. 147 (Materials Research Society Online Proceedings Library; Vol. 786).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    TY - GEN

    T1 - On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films

    AU - Dueñas, Salvador

    AU - Castán, Helena

    AU - Garcia, Héctor

    AU - Barbolla, Juan

    AU - Kukli, Kaupo

    AU - Ritala, Mikko

    AU - Leskelä, Markku

    N1 - Volume: Proceeding volume:

    PY - 2004

    Y1 - 2004

    KW - 116 Chemical sciences

    U2 - 10.1557/PROC-786-E3.18

    DO - 10.1557/PROC-786-E3.18

    M3 - Conference contribution

    T3 - Materials Research Society Online Proceedings Library

    SP - 147

    BT - Materials Research Society Symposium Proceedings

    ER -

    Dueñas S, Castán H, Garcia H, Barbolla J, Kukli K, Ritala M et al. On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. In Materials Research Society Symposium Proceedings . 2004. p. 147 . (Materials Research Society Online Proceedings Library). https://doi.org/10.1557/PROC-786-E3.18