On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films

Salvador Dueñas; Helena Castán; Héctor Garcia; Juan Barbolla; Kaupo Kukli; Mikko Ritala; Markku Leskelä

doi:10.1557/PROC-786-E3.18

On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films

Salvador Dueñas, Helena Castán, Héctor Garcia, Juan Barbolla, Kaupo Kukli, Mikko Ritala, Markku Leskelä

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Number of pages	6
Publication date	2004
Pages	147
DOIs	https://doi.org/10.1557/PROC-786-E3.18
Publication status	Published - 2004
MoE publication type	A4 Article in conference proceedings

Publication series

Name	Materials Research Society Online Proceedings Library
Volume	786

Fields of Science

116 Chemical sciences

Access to Document

10.1557/PROC-786-E3.18

Cite this

Dueñas, S., Castán, H., Garcia, H., Barbolla, J., Kukli, K., Ritala, M., & Leskelä, M. (2004). On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. In Materials Research Society Symposium Proceedings (pp. 147 ). (Materials Research Society Online Proceedings Library; Vol. 786). https://doi.org/10.1557/PROC-786-E3.18

Dueñas, Salvador ; Castán, Helena ; Garcia, Héctor ; Barbolla, Juan ; Kukli, Kaupo ; Ritala, Mikko ; Leskelä, Markku. / On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. Materials Research Society Symposium Proceedings . 2004. pp. 147 (Materials Research Society Online Proceedings Library).

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author = "Salvador Due{\~n}as and Helena Cast{\'a}n and H{\'e}ctor Garcia and Juan Barbolla and Kaupo Kukli and Mikko Ritala and Markku Leskel{\"a}",

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Dueñas, S, Castán, H, Garcia, H, Barbolla, J, Kukli, K, Ritala, M & Leskelä, M 2004, On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. in Materials Research Society Symposium Proceedings . Materials Research Society Online Proceedings Library, vol. 786, pp. 147 . https://doi.org/10.1557/PROC-786-E3.18

On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. / Dueñas, Salvador; Castán, Helena; Garcia, Héctor; Barbolla, Juan; Kukli, Kaupo; Ritala, Mikko ; Leskelä, Markku.

Materials Research Society Symposium Proceedings . 2004. p. 147 (Materials Research Society Online Proceedings Library; Vol. 786).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

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AU - Dueñas, Salvador

AU - Castán, Helena

AU - Garcia, Héctor

AU - Barbolla, Juan

AU - Kukli, Kaupo

AU - Ritala, Mikko

AU - Leskelä, Markku

N1 - Volume: Proceeding volume:

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Y1 - 2004

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U2 - 10.1557/PROC-786-E3.18

DO - 10.1557/PROC-786-E3.18

M3 - Conference contribution

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BT - Materials Research Society Symposium Proceedings

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Dueñas S, Castán H, Garcia H, Barbolla J, Kukli K, Ritala M et al. On the Interface Quality of MIS Structures Fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films. In Materials Research Society Symposium Proceedings . 2004. p. 147 . (Materials Research Society Online Proceedings Library). https://doi.org/10.1557/PROC-786-E3.18