Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors

T Hakkarainen; E.-M Pavelescu; Kai Arstila; V. D. S Dhaka; T Hakulinen; R Herda; J Konttinen; N Tkachenko; H Lemmetyinen; Juhani Keinonen; M Pessa

doi:10.1088/0022-3727/38/7/004

Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors

T Hakkarainen, E.-M Pavelescu, Kai Arstila, V. D. S Dhaka, T Hakulinen, R Herda, J Konttinen, N Tkachenko, H Lemmetyinen, Juhani Keinonen, M Pessa

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Optical properties of Ni+ irradiated and thermally annealed InGaAs/GaAs multiple quantum wells and semiconductor saturable absorber mirrors (SESAMs) have been studied using photoluminescence (PL) and non-linear reflectivity measurements. Rapid decrease of PL intensity and lifetime with increasing irradiation dose was accompanied by undesirable degradation of the non-linear optical properties of SESAMs. However, some of the irradiation-created defects could be removed and the non-linear optical properties improved by rapid thermal annealing. The combination of ion irradiation and annealing provided a selective method for controlling the absorption recovery time of SESAMs while preserving the non-linear properties. Irradiation with 10(12) cm(-2) of 6 MeV Ni+ ions and 1 s annealing at 400 degrees C led to an absorption recovery time of similar to 1 ps while the modulation depth, the non-saturable losses and the saturation fluence were all close to their as-grown values.

Original language	English
Journal	Journal of Physics. D, Applied Physics
Volume	38
Issue number	7
Pages (from-to)	985-989
Number of pages	5
ISSN	0022-3727
DOIs	https://doi.org/10.1088/0022-3727/38/7/004
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

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10.1088/0022-3727/38/7/004

Cite this

Hakkarainen, T., Pavelescu, E. .-M., Arstila, K., Dhaka, V. D. S., Hakulinen, T., Herda, R., Konttinen, J., Tkachenko, N., Lemmetyinen, H., Keinonen, J., & Pessa, M. (2005). Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors. Journal of Physics. D, Applied Physics, 38(7), 985-989. https://doi.org/10.1088/0022-3727/38/7/004

@article{7688a273e24041d893e9876dd70678bf,

title = "Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors",

abstract = "Optical properties of Ni+ irradiated and thermally annealed InGaAs/GaAs multiple quantum wells and semiconductor saturable absorber mirrors (SESAMs) have been studied using photoluminescence (PL) and non-linear reflectivity measurements. Rapid decrease of PL intensity and lifetime with increasing irradiation dose was accompanied by undesirable degradation of the non-linear optical properties of SESAMs. However, some of the irradiation-created defects could be removed and the non-linear optical properties improved by rapid thermal annealing. The combination of ion irradiation and annealing provided a selective method for controlling the absorption recovery time of SESAMs while preserving the non-linear properties. Irradiation with 10(12) cm(-2) of 6 MeV Ni+ ions and 1 s annealing at 400 degrees C led to an absorption recovery time of similar to 1 ps while the modulation depth, the non-saturable losses and the saturation fluence were all close to their as-grown values.",

author = "T Hakkarainen and E.-M Pavelescu and Kai Arstila and Dhaka, {V. D. S} and T Hakulinen and R Herda and J Konttinen and N Tkachenko and H Lemmetyinen and Juhani Keinonen and M Pessa",

year = "2005",

doi = "10.1088/0022-3727/38/7/004",

language = "English",

volume = "38",

pages = "985--989",

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issn = "0022-3727",

publisher = "IOP Publishing",

number = "7",

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Hakkarainen, T, Pavelescu, E-M, Arstila, K, Dhaka, VDS, Hakulinen, T, Herda, R, Konttinen, J, Tkachenko, N, Lemmetyinen, H, Keinonen, J & Pessa, M 2005, 'Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors', Journal of Physics. D, Applied Physics, vol. 38, no. 7, pp. 985-989. https://doi.org/10.1088/0022-3727/38/7/004

TY - JOUR

T1 - Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors

AU - Hakkarainen, T

AU - Pavelescu, E.-M

AU - Arstila, Kai

AU - Dhaka, V. D. S

AU - Hakulinen, T

AU - Herda, R

AU - Konttinen, J

AU - Tkachenko, N

AU - Lemmetyinen, H

AU - Keinonen, Juhani

AU - Pessa, M

PY - 2005

Y1 - 2005

N2 - Optical properties of Ni+ irradiated and thermally annealed InGaAs/GaAs multiple quantum wells and semiconductor saturable absorber mirrors (SESAMs) have been studied using photoluminescence (PL) and non-linear reflectivity measurements. Rapid decrease of PL intensity and lifetime with increasing irradiation dose was accompanied by undesirable degradation of the non-linear optical properties of SESAMs. However, some of the irradiation-created defects could be removed and the non-linear optical properties improved by rapid thermal annealing. The combination of ion irradiation and annealing provided a selective method for controlling the absorption recovery time of SESAMs while preserving the non-linear properties. Irradiation with 10(12) cm(-2) of 6 MeV Ni+ ions and 1 s annealing at 400 degrees C led to an absorption recovery time of similar to 1 ps while the modulation depth, the non-saturable losses and the saturation fluence were all close to their as-grown values.

AB - Optical properties of Ni+ irradiated and thermally annealed InGaAs/GaAs multiple quantum wells and semiconductor saturable absorber mirrors (SESAMs) have been studied using photoluminescence (PL) and non-linear reflectivity measurements. Rapid decrease of PL intensity and lifetime with increasing irradiation dose was accompanied by undesirable degradation of the non-linear optical properties of SESAMs. However, some of the irradiation-created defects could be removed and the non-linear optical properties improved by rapid thermal annealing. The combination of ion irradiation and annealing provided a selective method for controlling the absorption recovery time of SESAMs while preserving the non-linear properties. Irradiation with 10(12) cm(-2) of 6 MeV Ni+ ions and 1 s annealing at 400 degrees C led to an absorption recovery time of similar to 1 ps while the modulation depth, the non-saturable losses and the saturation fluence were all close to their as-grown values.

U2 - 10.1088/0022-3727/38/7/004

DO - 10.1088/0022-3727/38/7/004

M3 - Article

SN - 0022-3727

VL - 38

SP - 985

EP - 989

JO - Journal of Physics. D, Applied Physics

JF - Journal of Physics. D, Applied Physics

IS - 7

ER -