Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible

A. Lopez-Cazalilla, D. Chowdhury, A. Ilinov, S. Mondal, P. Barman, S. R. Bhattacharyya, D. Ghose, F. Djurabekova, K. Nordlund, S. Norris

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Article number235108
JournalJournal of Applied Physics
Volume123
Issue number23
Number of pages10
ISSN0021-8979
DOIs
Publication statusPublished - 21 Jun 2018
MoE publication typeA1 Journal article-refereed

Fields of Science

  • MOLECULAR-DYNAMICS
  • A-SI
  • BOMBARDMENT
  • SILICON
  • SIMULATION
  • RANGE
  • BULK
  • 114 Physical sciences

Cite this

Lopez-Cazalilla, A., Chowdhury, D., Ilinov, A., Mondal, S., Barman, P., Bhattacharyya, S. R., ... Norris, S. (2018). Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible. Journal of Applied Physics, 123(23), [235108]. https://doi.org/10.1063/1.5026447
Lopez-Cazalilla, A. ; Chowdhury, D. ; Ilinov, A. ; Mondal, S. ; Barman, P. ; Bhattacharyya, S. R. ; Ghose, D. ; Djurabekova, F. ; Nordlund, K. ; Norris, S. / Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible. In: Journal of Applied Physics. 2018 ; Vol. 123, No. 23.
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Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible. / Lopez-Cazalilla, A.; Chowdhury, D.; Ilinov, A.; Mondal, S.; Barman, P.; Bhattacharyya, S. R.; Ghose, D.; Djurabekova, F.; Nordlund, K.; Norris, S.

In: Journal of Applied Physics, Vol. 123, No. 23, 235108, 21.06.2018.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible

AU - Lopez-Cazalilla, A.

AU - Chowdhury, D.

AU - Ilinov, A.

AU - Mondal, S.

AU - Barman, P.

AU - Bhattacharyya, S. R.

AU - Ghose, D.

AU - Djurabekova, F.

AU - Nordlund, K.

AU - Norris, S.

PY - 2018/6/21

Y1 - 2018/6/21

KW - MOLECULAR-DYNAMICS

KW - A-SI

KW - BOMBARDMENT

KW - SILICON

KW - SIMULATION

KW - RANGE

KW - BULK

KW - 114 Physical sciences

U2 - 10.1063/1.5026447

DO - 10.1063/1.5026447

M3 - Article

VL - 123

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 23

M1 - 235108

ER -