Phase separation and nanocrystal formation in GeO

Christoph Sahle, C. Sternemann, H. Conrad, A. Herdt, O.M. Feroughi, M. Tolan, A. Hohl, R. Wagner, D. Lützenkirchen-Hecht, R. Frahm, Arto Sakko, Keijo Hämäläinen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    The temperature-induced phase separation (disproportionation) and Ge nanocrystal formation in bulk amorphous germanium monoxide (a-GeOx,x approximate to 1) are studied both in situ and ex situ by measurements of the x-ray absorption near edge structure at the Ge K-edge and x-ray diffraction. The considerable amount of suboxides contained in the native a-GeO samples decreases with increasing annealing temperature. The phase separation sets in at a temperature of 260 +/- 20 degrees C and is almost completed at a temperature of 450 +/- 18 degrees C before nanocrystal formation occurs. Ge nanocrystals of a few nanometers in diameter are observed for an annealing temperature of 509 +/- 15 degrees C. The time dependence of the phase separation and the effect of different annealing procedures are discussed. The presented results provide important information for the production of Ge nanocrystals embedded in amorphous oxide matrices which are relevant for optoelectronic applications.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume95
    Pages (from-to)021910
    Number of pages3
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed

    Fields of Science

    • 114 Physical sciences

    Cite this

    Sahle, C., Sternemann, C., Conrad, H., Herdt, A., Feroughi, O. M., Tolan, M., ... Hämäläinen, K. (2009). Phase separation and nanocrystal formation in GeO. Applied Physics Letters, 95, 021910. https://doi.org/10.1063/1.3183581
    Sahle, Christoph ; Sternemann, C. ; Conrad, H. ; Herdt, A. ; Feroughi, O.M. ; Tolan, M. ; Hohl, A. ; Wagner, R. ; Lützenkirchen-Hecht, D. ; Frahm, R. ; Sakko, Arto ; Hämäläinen, Keijo. / Phase separation and nanocrystal formation in GeO. In: Applied Physics Letters. 2009 ; Vol. 95. pp. 021910.
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    title = "Phase separation and nanocrystal formation in GeO",
    abstract = "The temperature-induced phase separation (disproportionation) and Ge nanocrystal formation in bulk amorphous germanium monoxide (a-GeOx,x approximate to 1) are studied both in situ and ex situ by measurements of the x-ray absorption near edge structure at the Ge K-edge and x-ray diffraction. The considerable amount of suboxides contained in the native a-GeO samples decreases with increasing annealing temperature. The phase separation sets in at a temperature of 260 +/- 20 degrees C and is almost completed at a temperature of 450 +/- 18 degrees C before nanocrystal formation occurs. Ge nanocrystals of a few nanometers in diameter are observed for an annealing temperature of 509 +/- 15 degrees C. The time dependence of the phase separation and the effect of different annealing procedures are discussed. The presented results provide important information for the production of Ge nanocrystals embedded in amorphous oxide matrices which are relevant for optoelectronic applications.",
    keywords = "114 Physical sciences",
    author = "Christoph Sahle and C. Sternemann and H. Conrad and A. Herdt and O.M. Feroughi and M. Tolan and A. Hohl and R. Wagner and D. L{\"u}tzenkirchen-Hecht and R. Frahm and Arto Sakko and Keijo H{\"a}m{\"a}l{\"a}inen",
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    Sahle, C, Sternemann, C, Conrad, H, Herdt, A, Feroughi, OM, Tolan, M, Hohl, A, Wagner, R, Lützenkirchen-Hecht, D, Frahm, R, Sakko, A & Hämäläinen, K 2009, 'Phase separation and nanocrystal formation in GeO' Applied Physics Letters, vol. 95, pp. 021910. https://doi.org/10.1063/1.3183581

    Phase separation and nanocrystal formation in GeO. / Sahle, Christoph; Sternemann, C.; Conrad, H.; Herdt, A.; Feroughi, O.M.; Tolan, M.; Hohl, A.; Wagner, R.; Lützenkirchen-Hecht, D.; Frahm, R.; Sakko, Arto; Hämäläinen, Keijo.

    In: Applied Physics Letters, Vol. 95, 2009, p. 021910.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Phase separation and nanocrystal formation in GeO

    AU - Sahle, Christoph

    AU - Sternemann, C.

    AU - Conrad, H.

    AU - Herdt, A.

    AU - Feroughi, O.M.

    AU - Tolan, M.

    AU - Hohl, A.

    AU - Wagner, R.

    AU - Lützenkirchen-Hecht, D.

    AU - Frahm, R.

    AU - Sakko, Arto

    AU - Hämäläinen, Keijo

    PY - 2009

    Y1 - 2009

    N2 - The temperature-induced phase separation (disproportionation) and Ge nanocrystal formation in bulk amorphous germanium monoxide (a-GeOx,x approximate to 1) are studied both in situ and ex situ by measurements of the x-ray absorption near edge structure at the Ge K-edge and x-ray diffraction. The considerable amount of suboxides contained in the native a-GeO samples decreases with increasing annealing temperature. The phase separation sets in at a temperature of 260 +/- 20 degrees C and is almost completed at a temperature of 450 +/- 18 degrees C before nanocrystal formation occurs. Ge nanocrystals of a few nanometers in diameter are observed for an annealing temperature of 509 +/- 15 degrees C. The time dependence of the phase separation and the effect of different annealing procedures are discussed. The presented results provide important information for the production of Ge nanocrystals embedded in amorphous oxide matrices which are relevant for optoelectronic applications.

    AB - The temperature-induced phase separation (disproportionation) and Ge nanocrystal formation in bulk amorphous germanium monoxide (a-GeOx,x approximate to 1) are studied both in situ and ex situ by measurements of the x-ray absorption near edge structure at the Ge K-edge and x-ray diffraction. The considerable amount of suboxides contained in the native a-GeO samples decreases with increasing annealing temperature. The phase separation sets in at a temperature of 260 +/- 20 degrees C and is almost completed at a temperature of 450 +/- 18 degrees C before nanocrystal formation occurs. Ge nanocrystals of a few nanometers in diameter are observed for an annealing temperature of 509 +/- 15 degrees C. The time dependence of the phase separation and the effect of different annealing procedures are discussed. The presented results provide important information for the production of Ge nanocrystals embedded in amorphous oxide matrices which are relevant for optoelectronic applications.

    KW - 114 Physical sciences

    U2 - 10.1063/1.3183581

    DO - 10.1063/1.3183581

    M3 - Article

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    JO - Applied Physics Letters

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    SN - 0003-6951

    ER -

    Sahle C, Sternemann C, Conrad H, Herdt A, Feroughi OM, Tolan M et al. Phase separation and nanocrystal formation in GeO. Applied Physics Letters. 2009;95:021910. https://doi.org/10.1063/1.3183581