Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering

O.M. Feroughi, C. Sternemann, C. Sahle, M.A. Schroer, H. Sternemann, H. Conrad, A. Hohl, G.T. Seidler, J. Bradley, T.T. Fister, M. Balasubramanian, A. Sakko, K. Pirkkalainen, K. Hämäläinen, M. Tolan

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
JournalApplied Physics Letters
Volume96
Pages (from-to)081912
Number of pages3
ISSN0003-6951
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Fields of Science

  • annealing
  • crystal microstructure
  • elemental semiconductors
  • nanostructured materials
  • phase separation
  • silicon
  • silicon compounds
  • X-ray scattering
  • AMORPHOUS-SILICON MONOXIDE
  • SMALL-ANGLE
  • 114 Physical sciences

Cite this

Feroughi, O. M., Sternemann, C., Sahle, C., Schroer, M. A., Sternemann, H., Conrad, H., ... Tolan, M. (2010). Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering. Applied Physics Letters, 96, 081912. https://doi.org/10.1063/1.3323106
Feroughi, O.M. ; Sternemann, C. ; Sahle, C. ; Schroer, M.A. ; Sternemann, H. ; Conrad, H. ; Hohl, A. ; Seidler, G.T. ; Bradley, J. ; Fister, T.T. ; Balasubramanian, M. ; Sakko, A. ; Pirkkalainen, K. ; Hämäläinen, K. ; Tolan, M. / Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering. In: Applied Physics Letters. 2010 ; Vol. 96. pp. 081912.
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title = "Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering",
keywords = "annealing, crystal microstructure, elemental semiconductors, nanostructured materials, phase separation, silicon, silicon compounds, X-ray scattering, AMORPHOUS-SILICON MONOXIDE, SMALL-ANGLE, 114 Physical sciences",
author = "O.M. Feroughi and C. Sternemann and C. Sahle and M.A. Schroer and H. Sternemann and H. Conrad and A. Hohl and G.T. Seidler and J. Bradley and T.T. Fister and M. Balasubramanian and A. Sakko and K. Pirkkalainen and K. H{\"a}m{\"a}l{\"a}inen and M. Tolan",
year = "2010",
doi = "10.1063/1.3323106",
language = "English",
volume = "96",
pages = "081912",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AVS",

}

Feroughi, OM, Sternemann, C, Sahle, C, Schroer, MA, Sternemann, H, Conrad, H, Hohl, A, Seidler, GT, Bradley, J, Fister, TT, Balasubramanian, M, Sakko, A, Pirkkalainen, K, Hämäläinen, K & Tolan, M 2010, 'Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering' Applied Physics Letters, vol. 96, pp. 081912. https://doi.org/10.1063/1.3323106

Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering. / Feroughi, O.M.; Sternemann, C.; Sahle, C.; Schroer, M.A.; Sternemann, H.; Conrad, H.; Hohl, A.; Seidler, G.T.; Bradley, J.; Fister, T.T.; Balasubramanian, M.; Sakko, A.; Pirkkalainen, K.; Hämäläinen, K.; Tolan, M.

In: Applied Physics Letters, Vol. 96, 2010, p. 081912.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering

AU - Feroughi, O.M.

AU - Sternemann, C.

AU - Sahle, C.

AU - Schroer, M.A.

AU - Sternemann, H.

AU - Conrad, H.

AU - Hohl, A.

AU - Seidler, G.T.

AU - Bradley, J.

AU - Fister, T.T.

AU - Balasubramanian, M.

AU - Sakko, A.

AU - Pirkkalainen, K.

AU - Hämäläinen, K.

AU - Tolan, M.

PY - 2010

Y1 - 2010

KW - annealing

KW - crystal microstructure

KW - elemental semiconductors

KW - nanostructured materials

KW - phase separation

KW - silicon

KW - silicon compounds

KW - X-ray scattering

KW - AMORPHOUS-SILICON MONOXIDE

KW - SMALL-ANGLE

KW - 114 Physical sciences

U2 - 10.1063/1.3323106

DO - 10.1063/1.3323106

M3 - Article

VL - 96

SP - 081912

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -

Feroughi OM, Sternemann C, Sahle C, Schroer MA, Sternemann H, Conrad H et al. Phase separation and Si nanocrystal formation in bulk SiO studied by x-ray scattering. Applied Physics Letters. 2010;96:081912. https://doi.org/10.1063/1.3323106