Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Article number162547
JournalNuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
Volume958
Number of pages6
ISSN0168-9002
DOIs
Publication statusPublished - 1 Apr 2020
MoE publication typeA1 Journal article-refereed
Event15th Vienna Conference on Instrumentation (VCI) - Vienna, Austria
Duration: 18 Feb 201922 Feb 2019

Fields of Science

  • Atomic layer deposition (ALD)
  • Al2O3
  • Pixel detector
  • Capacitive coupling
  • MAGNETIC-CZOCHRALSKI SILICON
  • SURFACE PASSIVATION
  • ALD
  • AL2O3
  • EFFICIENCY
  • 114 Physical sciences

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