Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide

J. Ott; A. Gadda; S. Bharthuar; E. Brucken; M. Golovleva; J. Härkonen; M. Kalliokoski; A. Karadzhinova-Ferrer; S. Kirschenmann; V. Litichevskyi; P. Luukka; L. Martikainen; T. Naaranoja

doi:10.1016/j.nima.2019.162547

Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide

J. Ott, A. Gadda, S. Bharthuar, E. Brucken, M. Golovleva, J. Härkonen, M. Kalliokoski, A. Karadzhinova-Ferrer, S. Kirschenmann, V. Litichevskyi, P. Luukka, L. Martikainen, T. Naaranoja

Helsinki Institute of Physics

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Article number	162547
Journal	Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
Volume	958
Number of pages	6
ISSN	0168-9002
DOIs	https://doi.org/10.1016/j.nima.2019.162547
Publication status	Published - 1 Apr 2020
MoE publication type	A1 Journal article-refereed
Event	15th Vienna Conference on Instrumentation (VCI) - Vienna, Austria Duration: 18 Feb 2019 → 22 Feb 2019

Fields of Science

Atomic layer deposition (ALD)
Al2O3
Pixel detector
Capacitive coupling
MAGNETIC-CZOCHRALSKI SILICON
SURFACE PASSIVATION
ALD
AL2O3
EFFICIENCY
114 Physical sciences

Access to Document

10.1016/j.nima.2019.162547

processing_ACcoupledAccepted author manuscript, 4.11 MBLicence: CC BY-NC-ND

Cite this

Ott, J., Gadda, A., Bharthuar, S., Brucken, E., Golovleva, M., Härkonen, J., Kalliokoski, M., Karadzhinova-Ferrer, A., Kirschenmann, S., Litichevskyi, V., Luukka, P., Martikainen, L., & Naaranoja, T. (2020). Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide. Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 958, Article 162547. https://doi.org/10.1016/j.nima.2019.162547

@article{1c82719b9ff9412f9dc6c07056652237,

title = "Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide",

keywords = "Atomic layer deposition (ALD), Al2O3, Pixel detector, Capacitive coupling, MAGNETIC-CZOCHRALSKI SILICON, SURFACE PASSIVATION, ALD, AL2O3, EFFICIENCY, 114 Physical sciences",

author = "J. Ott and A. Gadda and S. Bharthuar and E. Brucken and M. Golovleva and J. H{\"a}rkonen and M. Kalliokoski and A. Karadzhinova-Ferrer and S. Kirschenmann and V. Litichevskyi and P. Luukka and L. Martikainen and T. Naaranoja",

year = "2020",

month = apr,

day = "1",

doi = "10.1016/j.nima.2019.162547",

language = "English",

volume = "958",

journal = "Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

note = "15th Vienna Conference on Instrumentation (VCI) ; Conference date: 18-02-2019 Through 22-02-2019",

}

Ott, J, Gadda, A, Bharthuar, S, Brucken, E, Golovleva, M, Härkonen, J, Kalliokoski, M, Karadzhinova-Ferrer, A, Kirschenmann, S, Litichevskyi, V, Luukka, P, Martikainen, L & Naaranoja, T 2020, 'Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide', Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, vol. 958, 162547. https://doi.org/10.1016/j.nima.2019.162547

Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide. / Ott, J.; Gadda, A.; Bharthuar, S. et al.
In: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, Vol. 958, 162547, 01.04.2020.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide

AU - Ott, J.

AU - Gadda, A.

AU - Bharthuar, S.

AU - Brucken, E.

AU - Golovleva, M.

AU - Härkonen, J.

AU - Kalliokoski, M.

AU - Karadzhinova-Ferrer, A.

AU - Kirschenmann, S.

AU - Litichevskyi, V.

AU - Luukka, P.

AU - Martikainen, L.

AU - Naaranoja, T.

PY - 2020/4/1

Y1 - 2020/4/1

KW - Atomic layer deposition (ALD)

KW - Al2O3

KW - Pixel detector

KW - Capacitive coupling

KW - MAGNETIC-CZOCHRALSKI SILICON

KW - SURFACE PASSIVATION

KW - ALD

KW - AL2O3

KW - EFFICIENCY

KW - 114 Physical sciences

U2 - 10.1016/j.nima.2019.162547

DO - 10.1016/j.nima.2019.162547

M3 - Article

SN - 0168-9002

VL - 958

JO - Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment

JF - Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment

M1 - 162547

T2 - 15th Vienna Conference on Instrumentation (VCI)

Y2 - 18 February 2019 through 22 February 2019

ER -