Reductive Thermal Atomic Layer Deposition Process for Gold

Anton Vihervaara; Timo Hatanpää; Heta Nieminen; Kenichiro Mizohata; Mykhailo Chundak; Mikko Ritala

doi:10.1021/acsmaterialsau.2c00075

Reductive Thermal Atomic Layer Deposition Process for Gold

Anton Vihervaara, Timo Hatanpää, Heta Nieminen, Kenichiro Mizohata, Mykhailo Chundak, Mikko Ritala

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.

Original language	English
Journal	ACS materials Au
Volume	3
Issue number	3
Pages (from-to)	206-214
Number of pages	9
DOIs	https://doi.org/10.1021/acsmaterialsau.2c00075
Publication status	Published - May 2023
MoE publication type	A1 Journal article-refereed

Fields of Science

116 Chemical sciences

Access to Document

10.1021/acsmaterialsau.2c00075Licence: CC BY

acsmaterialsau.2c00075Final published version, 10.3 MBLicence: CC BY

HelsinkiALD
Putkonen, M. (Manager), Ritala, M. (Manager), Mäntymäki, M. (Operator), Kemell, M. (Operator), Vehkamäki, M. (Operator) & Heikkilä, M. (Operator)
Department of Chemistry
Facility/equipment: Research Laboratory

Cite this

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title = "Reductive Thermal Atomic Layer Deposition Process for Gold",

abstract = "In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.",

keywords = "116 Chemical sciences, Atomic layer deposition (ALD), Thin film deposition, Gold, Reducing agent",

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doi = "10.1021/acsmaterialsau.2c00075",

language = "English",

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T1 - Reductive Thermal Atomic Layer Deposition Process for Gold

AU - Vihervaara, Anton

AU - Hatanpää, Timo

AU - Nieminen, Heta

AU - Mizohata, Kenichiro

AU - Chundak, Mykhailo

AU - Ritala, Mikko

PY - 2023/5

Y1 - 2023/5

N2 - In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.

AB - In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.

KW - 116 Chemical sciences

KW - Atomic layer deposition (ALD)

KW - Thin film deposition

KW - Gold

KW - Reducing agent

U2 - 10.1021/acsmaterialsau.2c00075

DO - 10.1021/acsmaterialsau.2c00075

M3 - Article

SN - 2694-2461

VL - 3

SP - 206

EP - 214

JO - ACS materials Au

JF - ACS materials Au

IS - 3

ER -

Reductive Thermal Atomic Layer Deposition Process for Gold

Abstract

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HelsinkiALD

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