Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

J. Blasco; H. Castan; H. Garcia; S. Duenas; J. Sune; M. Kemell; K. Kukli; M. Ritala; M. Leskelä; E. Miranda

doi:10.1016/j.microrel.2014.07.067

Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

J. Blasco, H. Castan, H. Garcia, S. Duenas, J. Sune, M. Kemell, K. Kukli, M. Ritala, M. Leskelä, E. Miranda

Research output: Contribution to journal › Conference article › Scientific › peer-review

Original language	English
Journal	Microelectronics Reliability
Volume	54
Issue number	9-10
Pages (from-to)	1707-1711
Number of pages	5
ISSN	0026-2714
DOIs	https://doi.org/10.1016/j.microrel.2014.07.067
Publication status	Published - 2014
MoE publication type	A4 Article in conference proceedings
Event	European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Berlin, Germany Duration: 29 Sept 2014 → 2 Oct 2014 Conference number: 25

Fields of Science

Breakdown
Reliability
High-kappa
Resistive switching
SOFT BREAKDOWN
DIODE EQUATION
GATE OXIDES
TEMPERATURE
DEVICES
SILICON
LAYERS
116 Chemical sciences
114 Physical sciences

Access to Document

10.1016/j.microrel.2014.07.067

Cite this

@article{310aa5ba631840ef831c4b3756e13e03,

title = "Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors",

keywords = "Breakdown, Reliability, High-kappa, Resistive switching, SOFT BREAKDOWN, DIODE EQUATION, GATE OXIDES, TEMPERATURE, DEVICES, SILICON, LAYERS, 116 Chemical sciences, 114 Physical sciences",

author = "J. Blasco and H. Castan and H. Garcia and S. Duenas and J. Sune and M. Kemell and K. Kukli and M. Ritala and M. Leskel{\"a} and E. Miranda",

note = " Volume: 54 ; European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) ; Conference date: 29-09-2014 Through 02-10-2014",

year = "2014",

doi = "10.1016/j.microrel.2014.07.067",

language = "English",

volume = "54",

pages = "1707--1711",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "PERGAMON",

number = "9-10",

}

TY - JOUR

T1 - Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

AU - Blasco, J.

AU - Castan, H.

AU - Garcia, H.

AU - Duenas, S.

AU - Sune, J.

AU - Kemell, M.

AU - Kukli, K.

AU - Ritala, M.

AU - Leskelä, M.

AU - Miranda, E.

N1 - Conference code: 25

PY - 2014

Y1 - 2014

KW - Breakdown

KW - Reliability

KW - High-kappa

KW - Resistive switching

KW - SOFT BREAKDOWN

KW - DIODE EQUATION

KW - GATE OXIDES

KW - TEMPERATURE

KW - DEVICES

KW - SILICON

KW - LAYERS

KW - 116 Chemical sciences

KW - 114 Physical sciences

U2 - 10.1016/j.microrel.2014.07.067

DO - 10.1016/j.microrel.2014.07.067

M3 - Conference article

SN - 0026-2714

VL - 54

SP - 1707

EP - 1711

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-10

T2 - European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Y2 - 29 September 2014 through 2 October 2014

ER -