Sputtering of beryllium oxide by deuterium at different temperatures simulated with molecular dynamics

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Abstract

The sputtering yield of beryllium oxide (BeO) by incident deuterium (D) ions, for energies from 10 eV to 200 eV, has been calculated for temperatures between 300 K and 800 K using classical molecular dynamics. First, cumulative irradiations are done to build up a concentration of D in the material, equal to the one experimentally measured, that varies from 0.12 atomic fraction (300 K - 500 K) to 0.02 atomic fraction (800 K). After building up the concentration of D, non-cumulative irradiations are done to estimate the sputtering yields of BeO. For all incident energies, the sputtering yield peaks at 500 K, being closely related to the decrease of the concentration of D above this temperature. While for 10 eV, the concentration of D on the surface drives the temperature dependence, above 30 eV, it is the amount of surface damage created during the cumulative irradiation.
Original languageEnglish
JournalPhysica Scripta. T
ISSN0281-1847
Publication statusAccepted/In press - Sep 2019
MoE publication typeA1 Journal article-refereed

Cite this

@article{9acc19f1adfe49b2a2e4926f5558388f,
title = "Sputtering of beryllium oxide by deuterium at different temperatures simulated with molecular dynamics",
abstract = "The sputtering yield of beryllium oxide (BeO) by incident deuterium (D) ions, for energies from 10 eV to 200 eV, has been calculated for temperatures between 300 K and 800 K using classical molecular dynamics. First, cumulative irradiations are done to build up a concentration of D in the material, equal to the one experimentally measured, that varies from 0.12 atomic fraction (300 K - 500 K) to 0.02 atomic fraction (800 K). After building up the concentration of D, non-cumulative irradiations are done to estimate the sputtering yields of BeO. For all incident energies, the sputtering yield peaks at 500 K, being closely related to the decrease of the concentration of D above this temperature. While for 10 eV, the concentration of D on the surface drives the temperature dependence, above 30 eV, it is the amount of surface damage created during the cumulative irradiation.",
author = "Etienne Hodille and Jesper Byggm{\"a}star and Elnaz Safi and Kai Nordlund",
year = "2019",
month = "9",
language = "English",
journal = "Physica Scripta. T",
issn = "0281-1847",
publisher = "Royal Swedish Academy of Sciences",

}

TY - JOUR

T1 - Sputtering of beryllium oxide by deuterium at different temperatures simulated with molecular dynamics

AU - Hodille, Etienne

AU - Byggmästar, Jesper

AU - Safi, Elnaz

AU - Nordlund, Kai

PY - 2019/9

Y1 - 2019/9

N2 - The sputtering yield of beryllium oxide (BeO) by incident deuterium (D) ions, for energies from 10 eV to 200 eV, has been calculated for temperatures between 300 K and 800 K using classical molecular dynamics. First, cumulative irradiations are done to build up a concentration of D in the material, equal to the one experimentally measured, that varies from 0.12 atomic fraction (300 K - 500 K) to 0.02 atomic fraction (800 K). After building up the concentration of D, non-cumulative irradiations are done to estimate the sputtering yields of BeO. For all incident energies, the sputtering yield peaks at 500 K, being closely related to the decrease of the concentration of D above this temperature. While for 10 eV, the concentration of D on the surface drives the temperature dependence, above 30 eV, it is the amount of surface damage created during the cumulative irradiation.

AB - The sputtering yield of beryllium oxide (BeO) by incident deuterium (D) ions, for energies from 10 eV to 200 eV, has been calculated for temperatures between 300 K and 800 K using classical molecular dynamics. First, cumulative irradiations are done to build up a concentration of D in the material, equal to the one experimentally measured, that varies from 0.12 atomic fraction (300 K - 500 K) to 0.02 atomic fraction (800 K). After building up the concentration of D, non-cumulative irradiations are done to estimate the sputtering yields of BeO. For all incident energies, the sputtering yield peaks at 500 K, being closely related to the decrease of the concentration of D above this temperature. While for 10 eV, the concentration of D on the surface drives the temperature dependence, above 30 eV, it is the amount of surface damage created during the cumulative irradiation.

M3 - Article

JO - Physica Scripta. T

JF - Physica Scripta. T

SN - 0281-1847

ER -