Study of the influence of the dielectric composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

H. Castán, S. Dueñas, K. Kukli, M. Kemell, M. Ritala, M. Leskelä

Research output: Contribution to journalConference articleScientificpeer-review


The memory behavior of Al/Ti/ZrO2:Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps. © The Electrochemical Society.
Original languageEnglish
JournalECS transactions
Issue number8
Pages (from-to)143-148
Number of pages6
Publication statusPublished - 2018
MoE publication typeA4 Article in conference proceedings
EventECS Meeting: Advanced CMOS-Compatible Semiconductor Devices 18 - Seattle, United States
Duration: 13 May 201817 May 2018
Conference number: 233

Fields of Science

  • Alumina
  • Aluminum oxide, Admittance parameters
  • Cation ratio
  • Dielectric compositions
  • Electrical characterization
  • Intermediate state
  • Memory applications
  • Resistive switching behaviors
  • Resistive switching memory, Semiconductor devices
  • 116 Chemical sciences

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