Abstract
The memory behavior of Al/Ti/ZrO2:Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps. © The Electrochemical Society.
| Original language | English |
|---|---|
| Journal | ECS transactions |
| Volume | 85 |
| Issue number | 8 |
| Pages (from-to) | 143-148 |
| Number of pages | 6 |
| ISSN | 1938-5862 |
| DOIs | |
| Publication status | Published - 2018 |
| MoE publication type | A4 Article in conference proceedings |
| Event | ECS Meeting: Advanced CMOS-Compatible Semiconductor Devices 18 - Seattle, United States Duration: 13 May 2018 → 17 May 2018 Conference number: 233 https://www.electrochem.org/233 |
Fields of Science
- Alumina
- Aluminum oxide, Admittance parameters
- Cation ratio
- Dielectric compositions
- Electrical characterization
- Intermediate state
- Memory applications
- Resistive switching behaviors
- Resistive switching memory, Semiconductor devices
- 116 Chemical sciences