Vacancy defects in UV-transparent HVPE-AlN

Tanja Kuittinen, Filip Tuomisto, Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Akinori Koukitu, Ramon Collazo, Zlatko Sitar

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

We used positron annihilation spectroscopy to study bulk AlN single crystals grown by physical vapor transport (PVT) and hydride vapor phase epitaxy (HVPE). Unlike in previous measurements in AlN, we see a clear Alvacancy related lifetime component already at room temperature in HVPE-AlN. Overall, our results show the more UV-transparent HVPE-AlN to have higher concentration of Al-vacancy related defects than PVT-AlN, suggesting that Al-vacancies are not the origin of UV absorption in AlN.
Original languageEnglish
Title of host publicationPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4
EditorsCR Eddy, M Kuball, DD Koleske, H Amano
Number of pages3
PublisherWiley-VCH
Publication date2014
Pages405-407
DOIs
Publication statusPublished - 2014
Externally publishedYes
MoE publication typeA4 Article in conference proceedings
Event10th International Conference on Nitride Semiconductors (ICNS) - Washington
Duration: 25 Aug 201330 Aug 2013

Publication series

NamePhysica Status Solidi C-Current Topics in Solid State Physics
PublisherWILEY-V C H VERLAG GMBH
Volume11
ISSN (Print)1862-6351

Fields of Science

  • AlN
  • UV-transparency
  • vacancies
  • positron annihilation
  • CONDUCTIVITY
  • CRYSTALS
  • 114 Physical sciences

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