Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz

P. K Sahoo, S Gasiorek, K. P Lieb, Kai Arstila, Juhani Keinonen

    Tutkimustuotos: ArtikkelijulkaisuArtikkeliTieteellinenvertaisarvioitu

    Kuvaus

    The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.
    Alkuperäiskielienglanti
    LehtiApplied Physics Letters
    Vuosikerta87
    Numero2
    Sivut021105
    Sivumäärä3
    ISSN0003-6951
    DOI - pysyväislinkit
    TilaJulkaistu - 2005
    OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä, vertaisarvioitu

    Tieteenalat

    • 114 Fysiikka

    Lainaa tätä

    Sahoo, P. K ; Gasiorek, S ; Lieb, K. P ; Arstila, Kai ; Keinonen, Juhani. / Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz. Julkaisussa: Applied Physics Letters. 2005 ; Vuosikerta 87, Nro 2. Sivut 021105.
    @article{b927d6c16bc34c06a4bf07a5ffb0d7e9,
    title = "Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz",
    abstract = "The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75{\%}) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.",
    keywords = "114 Physical sciences",
    author = "Sahoo, {P. K} and S Gasiorek and Lieb, {K. P} and Kai Arstila and Juhani Keinonen",
    year = "2005",
    doi = "10.1063/1.1994953",
    language = "English",
    volume = "87",
    pages = "021105",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "AVS",
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    }

    Sahoo, PK, Gasiorek, S, Lieb, KP, Arstila, K & Keinonen, J 2005, 'Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz', Applied Physics Letters, Vuosikerta 87, Nro 2, Sivut 021105. https://doi.org/10.1063/1.1994953

    Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz. / Sahoo, P. K; Gasiorek, S; Lieb, K. P; Arstila, Kai; Keinonen, Juhani.

    julkaisussa: Applied Physics Letters, Vuosikerta 87, Nro 2, 2005, s. 021105.

    Tutkimustuotos: ArtikkelijulkaisuArtikkeliTieteellinenvertaisarvioitu

    TY - JOUR

    T1 - Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz

    AU - Sahoo, P. K

    AU - Gasiorek, S

    AU - Lieb, K. P

    AU - Arstila, Kai

    AU - Keinonen, Juhani

    PY - 2005

    Y1 - 2005

    N2 - The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.

    AB - The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.

    KW - 114 Physical sciences

    U2 - 10.1063/1.1994953

    DO - 10.1063/1.1994953

    M3 - Article

    VL - 87

    SP - 021105

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 2

    ER -