Atomic layer deposition of iridium oxide thin films from Ir(acac)₃ and ozone

Jani Hämäläinen, Marianna Kemell, Frans Munnik, Ulrich Kreissig, Mikko Ritala, Markku Leskelä

    Tutkimustuotos: ArtikkelijulkaisuArtikkeliTieteellinenvertaisarvioitu

    Abstrakti

    Iridium oxide thin films were grown with atomic layer deposition (ALD) from Ir(acac)(3) and ozone between 165 and 200 degrees C. The films were successfully deposited on soda lime glass, silicon substrate with native oxide, and Al2O3 adhesion layer. Saturation of the growth rate with respect to both precursors was verified and the film thickness depended linearly on the number of deposition cycles applied. The iridium oxide films had low impurity contents and good adhesion to all tested surfaces. IrO2 film deposited at 185 degrees C had homogeneous depth profile and contained 3.5 at % hydrogen and less than 0.5 at % carbon impurities. Resistivities of about 40 nm thick IrO2 films varied between 170 and 200 mu Omega cm. The films deposited above 200 degrees C were metallic iridium. All the films deposited were crystalline according to X-ray diffraction patterns.
    Alkuperäiskielienglanti
    LehtiChemistry of Materials
    Vuosikerta20
    Sivut2903-2907
    Sivumäärä5
    ISSN0897-4756
    DOI - pysyväislinkit
    TilaJulkaistu - 2008
    OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä, vertaisarvioitu

    Tieteenalat

    • 116 Kemia

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