Atomistic simulation of ion irradiation of semiconductor heterostructures

Tutkimustuotos: ArtikkelijulkaisuKonferenssiartikkeliTieteellinenvertaisarvioitu

Kuvaus

Recently the possibility to use ion beam mixing combined with suitable annealing has been suggested as a possible means to synthesize individual silicon quantum dots in a silica layer, with the possibility to function as single-electron transistors. For this to work, it is necessary to have a careful control of the ion beam mixing in Si/SiO2/Si heterostructures, as well as understand the nature of not only the composition, but also the chemical modification of the SiO2 layer by the mixing with Si. We describe here a procedure to synthesize Si/SiO2/Si heterostructures in molecular dynamics, with an energy minimization scheme to create strong and stable interfaces. The created heterostructures are irradiated at energies and fluences matching corresponding experiments. The results show a considerable degree of interface mixing, as expected. They also show some densification of the silica layer due to recoil implantation, and formation of a considerable number of coordination defects. Due to the strong covalent bonding in silicon and silica, the densification is not fully elastically relaxed even in the presence of a nearby surface.
Alkuperäiskielienglanti
LehtiNuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Vuosikerta409
Sivut14-18
Sivumäärä5
ISSN0168-583X
DOI - pysyväislinkit
TilaJulkaistu - 18 lokakuuta 2017
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaIBMM2016 - Wellington, Uusi-Seelanti
Kesto: 30 lokakuuta 20164 marraskuuta 2016
Konferenssinumero: 20

Lisätietoja


Volume:
Host publication title: Proceedings of the 20th International Conference on Ion Beam Modification of Materials (IBMM 2016)
Proceeding volume: 409

Tieteenalat

  • 114 Fysiikka

Lainaa tätä

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title = "Atomistic simulation of ion irradiation of semiconductor heterostructures",
abstract = "Recently the possibility to use ion beam mixing combined with suitable annealing has been suggested as a possible means to synthesize individual silicon quantum dots in a silica layer, with the possibility to function as single-electron transistors. For this to work, it is necessary to have a careful control of the ion beam mixing in Si/SiO2/Si heterostructures, as well as understand the nature of not only the composition, but also the chemical modification of the SiO2 layer by the mixing with Si. We describe here a procedure to synthesize Si/SiO2/Si heterostructures in molecular dynamics, with an energy minimization scheme to create strong and stable interfaces. The created heterostructures are irradiated at energies and fluences matching corresponding experiments. The results show a considerable degree of interface mixing, as expected. They also show some densification of the silica layer due to recoil implantation, and formation of a considerable number of coordination defects. Due to the strong covalent bonding in silicon and silica, the densification is not fully elastically relaxed even in the presence of a nearby surface.",
keywords = "114 Physical sciences",
author = "Christoffer Fridlund and Jarno Laakso and Kai Nordlund and Flyura Djurabekova",
note = "Volume: Host publication title: Proceedings of the 20th International Conference on Ion Beam Modification of Materials (IBMM 2016) Proceeding volume: 409",
year = "2017",
month = "10",
day = "18",
doi = "10.1016/j.nimb.2017.04.034",
language = "English",
volume = "409",
pages = "14--18",
journal = "Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

Atomistic simulation of ion irradiation of semiconductor heterostructures. / Fridlund, Christoffer; Laakso, Jarno; Nordlund, Kai; Djurabekova, Flyura.

julkaisussa: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vuosikerta 409, 18.10.2017, s. 14-18.

Tutkimustuotos: ArtikkelijulkaisuKonferenssiartikkeliTieteellinenvertaisarvioitu

TY - JOUR

T1 - Atomistic simulation of ion irradiation of semiconductor heterostructures

AU - Fridlund, Christoffer

AU - Laakso, Jarno

AU - Nordlund, Kai

AU - Djurabekova, Flyura

N1 - Volume: Host publication title: Proceedings of the 20th International Conference on Ion Beam Modification of Materials (IBMM 2016) Proceeding volume: 409

PY - 2017/10/18

Y1 - 2017/10/18

N2 - Recently the possibility to use ion beam mixing combined with suitable annealing has been suggested as a possible means to synthesize individual silicon quantum dots in a silica layer, with the possibility to function as single-electron transistors. For this to work, it is necessary to have a careful control of the ion beam mixing in Si/SiO2/Si heterostructures, as well as understand the nature of not only the composition, but also the chemical modification of the SiO2 layer by the mixing with Si. We describe here a procedure to synthesize Si/SiO2/Si heterostructures in molecular dynamics, with an energy minimization scheme to create strong and stable interfaces. The created heterostructures are irradiated at energies and fluences matching corresponding experiments. The results show a considerable degree of interface mixing, as expected. They also show some densification of the silica layer due to recoil implantation, and formation of a considerable number of coordination defects. Due to the strong covalent bonding in silicon and silica, the densification is not fully elastically relaxed even in the presence of a nearby surface.

AB - Recently the possibility to use ion beam mixing combined with suitable annealing has been suggested as a possible means to synthesize individual silicon quantum dots in a silica layer, with the possibility to function as single-electron transistors. For this to work, it is necessary to have a careful control of the ion beam mixing in Si/SiO2/Si heterostructures, as well as understand the nature of not only the composition, but also the chemical modification of the SiO2 layer by the mixing with Si. We describe here a procedure to synthesize Si/SiO2/Si heterostructures in molecular dynamics, with an energy minimization scheme to create strong and stable interfaces. The created heterostructures are irradiated at energies and fluences matching corresponding experiments. The results show a considerable degree of interface mixing, as expected. They also show some densification of the silica layer due to recoil implantation, and formation of a considerable number of coordination defects. Due to the strong covalent bonding in silicon and silica, the densification is not fully elastically relaxed even in the presence of a nearby surface.

KW - 114 Physical sciences

U2 - 10.1016/j.nimb.2017.04.034

DO - 10.1016/j.nimb.2017.04.034

M3 - Conference article

VL - 409

SP - 14

EP - 18

JO - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -