Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Abdullah S. Almogbel; Christian J. Zollner; Burhan K. Saifaddin; Michael Iza; Jianfeng Wang; Yifan Yao; Michael Wang; Humberto Foronda; Igor Prozheev; Filip Tuomisto; Abdulrahman Albadri; Shuji Nakamura; Steven P. DenBaars; James S. Speck

doi:10.1063/5.0066652

Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza, Jianfeng Wang, Yifan Yao, Michael Wang, Humberto Foronda, Igor Prozheev, Filip Tuomisto, Abdulrahman Albadri, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Tutkimustuotos: Artikkelijulkaisu › Artikkeli › Tieteellinen › vertaisarvioitu

Alkuperäiskieli	englanti
Artikkeli	095119
Lehti	AIP Advances
Vuosikerta	11
Numero	9
Sivumäärä	8
ISSN	2158-3226
DOI - pysyväislinkit	https://doi.org/10.1063/5.0066652
Tila	Julkaistu - 1 syysk. 2021
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä, vertaisarvioitu

Tieteenalat

114 Fysiikka

Pääsy asiakirjaan

10.1063/5.0066652Lisenssi: CC BY

5.0066652Lopullinen julkaistu versio, 8,27 MBLisenssi: CC BY

Siteeraa tätä

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title = "Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration",

keywords = "114 Physical sciences, OPTOELECTRONIC DEVICES, ULTRAVIOLET, NITRIDE, TEMPERATURE, DEPOSITION, DEFECTS, DENSITY, LAYERS, STATE",

author = "Almogbel, {Abdullah S.} and Zollner, {Christian J.} and Saifaddin, {Burhan K.} and Michael Iza and Jianfeng Wang and Yifan Yao and Michael Wang and Humberto Foronda and Igor Prozheev and Filip Tuomisto and Abdulrahman Albadri and Shuji Nakamura and DenBaars, {Steven P.} and Speck, {James S.}",

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month = sep,

day = "1",

doi = "10.1063/5.0066652",

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T1 - Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

AU - Almogbel, Abdullah S.

AU - Zollner, Christian J.

AU - Saifaddin, Burhan K.

AU - Iza, Michael

AU - Wang, Jianfeng

AU - Yao, Yifan

AU - Wang, Michael

AU - Foronda, Humberto

AU - Prozheev, Igor

AU - Tuomisto, Filip

AU - Albadri, Abdulrahman

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

AU - Speck, James S.

PY - 2021/9/1

Y1 - 2021/9/1

KW - 114 Physical sciences

KW - OPTOELECTRONIC DEVICES

KW - ULTRAVIOLET

KW - NITRIDE

KW - TEMPERATURE

KW - DEPOSITION

KW - DEFECTS

KW - DENSITY

KW - LAYERS

KW - STATE

U2 - 10.1063/5.0066652

DO - 10.1063/5.0066652

M3 - Article

AN - SCOPUS:85115940411

SN - 2158-3226

VL - 11

JO - AIP Advances

JF - AIP Advances

IS - 9

M1 - 095119

ER -