Imaging the Hidden Surface of a Moving MEMS Bridge

Tutkimustuotos: Artikkeli kirjassa/raportissa/konferenssijulkaisussaKonferenssiartikkeliTieteellinen

Kuvaus

We imaged in real time the hidden surface of an oscillating (120 Hz) MEMS bridge (a 400 µm x 25 µm x 4 µm local heater on a Si wafer). This has to our knowledge not been done before. Our method relies on stroboscopic white light interferometry where pulsed illumination is synchronized with the sample oscillation. A customized light source consisting of three different LEDs (1020 nm, 1050 nm, 1070 nm) emits short duration light pulses to avoid blurring of the interference fringes. We can characterize both in-plane and out-of-plane sample motion.
Our LED driver features an integrated MOSFET driver from IXYS RF (IXDD415SI). The components were soldered on single-sided Metal-Core Printed Circuit Board (Thermal Clad®) for stable performance due to its good thermal conductivity
(2.2 W/(m•K)).
The switching parameters of the light source were determined using a fiber-optic moni-tor (Antel AFM-S) connected to an oscilloscope (Tektronix TDS2024B). We measured a minimum optical pulses full duration half maximum (FDHM) of 20.5 ± 0.1 ns for the 1020 nm IR LED (LED1020-03), 22.9 ± 0.1 ns for the 1050 nm IR LED (LED1050-03) and 21.7 ± 0.1 ns for the 1070 nm IR LED (LED1070-03).
Measurements were done by varying the phase delay (difference) between the sample drive signal and the illumination signal from 0º (no displacement) - 90º (max. displace-ment) in steps of 22.5º using a dual channel arbitrary waveform generator (Tektronix AFG3252). We measured the microbridge thickness to be 4.34 ± 0.04 µm for both 0º and 90º phase angle using the refractive index of silicon (3.6) and the maximum out-of plane-displacement at 90º phase angle to be 2.01 ± 0.05 µm.
Alkuperäiskielienglanti
OtsikkoUnknown host publication
Julkaisupäivä19 lokakuuta 2012
TilaJulkaistu - 19 lokakuuta 2012
OKM-julkaisutyyppiB3 Vertaisarvioimaton artikkeli konferenssijulkaisussa
TapahtumaOptics- and Photonics day, ADOPT day - Stockholm, Ruotsi
Kesto: 18 lokakuuta 201219 lokakuuta 2012

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  • 114 Fysiikka

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@inproceedings{a9e155280467480fa5eb3b8113aef93a,
title = "Imaging the Hidden Surface of a Moving MEMS Bridge",
abstract = "We imaged in real time the hidden surface of an oscillating (120 Hz) MEMS bridge (a 400 µm x 25 µm x 4 µm local heater on a Si wafer). This has to our knowledge not been done before. Our method relies on stroboscopic white light interferometry where pulsed illumination is synchronized with the sample oscillation. A customized light source consisting of three different LEDs (1020 nm, 1050 nm, 1070 nm) emits short duration light pulses to avoid blurring of the interference fringes. We can characterize both in-plane and out-of-plane sample motion.Our LED driver features an integrated MOSFET driver from IXYS RF (IXDD415SI). The components were soldered on single-sided Metal-Core Printed Circuit Board (Thermal Clad{\circledR}) for stable performance due to its good thermal conductivity(2.2 W/(m•K)).The switching parameters of the light source were determined using a fiber-optic moni-tor (Antel AFM-S) connected to an oscilloscope (Tektronix TDS2024B). We measured a minimum optical pulses full duration half maximum (FDHM) of 20.5 ± 0.1 ns for the 1020 nm IR LED (LED1020-03), 22.9 ± 0.1 ns for the 1050 nm IR LED (LED1050-03) and 21.7 ± 0.1 ns for the 1070 nm IR LED (LED1070-03).Measurements were done by varying the phase delay (difference) between the sample drive signal and the illumination signal from 0º (no displacement) - 90º (max. displace-ment) in steps of 22.5º using a dual channel arbitrary waveform generator (Tektronix AFG3252). We measured the microbridge thickness to be 4.34 ± 0.04 µm for both 0º and 90º phase angle using the refractive index of silicon (3.6) and the maximum out-of plane-displacement at 90º phase angle to be 2.01 ± 0.05 µm.",
keywords = "114 Physical sciences",
author = "Tor Paulin and Anton Nolvi and Ville Heikkinen and Kassamakov, {Ivan Vladislavov} and Edward Haeggstr{\"o}m",
note = "Volume: Proceeding volume:",
year = "2012",
month = "10",
day = "19",
language = "English",
booktitle = "Unknown host publication",

}

Paulin, T, Nolvi, A, Heikkinen, V, Kassamakov, IV & Haeggström, E 2012, Imaging the Hidden Surface of a Moving MEMS Bridge. julkaisussa Unknown host publication. Optics- and Photonics day, ADOPT day, Stockholm, Ruotsi, 18/10/2012.

Imaging the Hidden Surface of a Moving MEMS Bridge. / Paulin, Tor; Nolvi, Anton; Heikkinen, Ville; Kassamakov, Ivan Vladislavov; Haeggström, Edward.

Unknown host publication. 2012.

Tutkimustuotos: Artikkeli kirjassa/raportissa/konferenssijulkaisussaKonferenssiartikkeliTieteellinen

TY - GEN

T1 - Imaging the Hidden Surface of a Moving MEMS Bridge

AU - Paulin, Tor

AU - Nolvi, Anton

AU - Heikkinen, Ville

AU - Kassamakov, Ivan Vladislavov

AU - Haeggström, Edward

N1 - Volume: Proceeding volume:

PY - 2012/10/19

Y1 - 2012/10/19

N2 - We imaged in real time the hidden surface of an oscillating (120 Hz) MEMS bridge (a 400 µm x 25 µm x 4 µm local heater on a Si wafer). This has to our knowledge not been done before. Our method relies on stroboscopic white light interferometry where pulsed illumination is synchronized with the sample oscillation. A customized light source consisting of three different LEDs (1020 nm, 1050 nm, 1070 nm) emits short duration light pulses to avoid blurring of the interference fringes. We can characterize both in-plane and out-of-plane sample motion.Our LED driver features an integrated MOSFET driver from IXYS RF (IXDD415SI). The components were soldered on single-sided Metal-Core Printed Circuit Board (Thermal Clad®) for stable performance due to its good thermal conductivity(2.2 W/(m•K)).The switching parameters of the light source were determined using a fiber-optic moni-tor (Antel AFM-S) connected to an oscilloscope (Tektronix TDS2024B). We measured a minimum optical pulses full duration half maximum (FDHM) of 20.5 ± 0.1 ns for the 1020 nm IR LED (LED1020-03), 22.9 ± 0.1 ns for the 1050 nm IR LED (LED1050-03) and 21.7 ± 0.1 ns for the 1070 nm IR LED (LED1070-03).Measurements were done by varying the phase delay (difference) between the sample drive signal and the illumination signal from 0º (no displacement) - 90º (max. displace-ment) in steps of 22.5º using a dual channel arbitrary waveform generator (Tektronix AFG3252). We measured the microbridge thickness to be 4.34 ± 0.04 µm for both 0º and 90º phase angle using the refractive index of silicon (3.6) and the maximum out-of plane-displacement at 90º phase angle to be 2.01 ± 0.05 µm.

AB - We imaged in real time the hidden surface of an oscillating (120 Hz) MEMS bridge (a 400 µm x 25 µm x 4 µm local heater on a Si wafer). This has to our knowledge not been done before. Our method relies on stroboscopic white light interferometry where pulsed illumination is synchronized with the sample oscillation. A customized light source consisting of three different LEDs (1020 nm, 1050 nm, 1070 nm) emits short duration light pulses to avoid blurring of the interference fringes. We can characterize both in-plane and out-of-plane sample motion.Our LED driver features an integrated MOSFET driver from IXYS RF (IXDD415SI). The components were soldered on single-sided Metal-Core Printed Circuit Board (Thermal Clad®) for stable performance due to its good thermal conductivity(2.2 W/(m•K)).The switching parameters of the light source were determined using a fiber-optic moni-tor (Antel AFM-S) connected to an oscilloscope (Tektronix TDS2024B). We measured a minimum optical pulses full duration half maximum (FDHM) of 20.5 ± 0.1 ns for the 1020 nm IR LED (LED1020-03), 22.9 ± 0.1 ns for the 1050 nm IR LED (LED1050-03) and 21.7 ± 0.1 ns for the 1070 nm IR LED (LED1070-03).Measurements were done by varying the phase delay (difference) between the sample drive signal and the illumination signal from 0º (no displacement) - 90º (max. displace-ment) in steps of 22.5º using a dual channel arbitrary waveform generator (Tektronix AFG3252). We measured the microbridge thickness to be 4.34 ± 0.04 µm for both 0º and 90º phase angle using the refractive index of silicon (3.6) and the maximum out-of plane-displacement at 90º phase angle to be 2.01 ± 0.05 µm.

KW - 114 Physical sciences

M3 - Conference contribution

BT - Unknown host publication

ER -