Modeling of high-fluence irradiation of amorphous Si and crystalline Al by linearly focused Ar ions

Tutkimustuotos: ArtikkelijulkaisuArtikkeliTieteellinenvertaisarvioitu

Kuvaus

Long time ion irradiation of surfaces under tilted incidence causes formation of regular nanostructures known as surface ripples. The nature of mechanisms leading to ripples is still not clear, this is why computational methods can shed the light on such a complex phenomenon and help to understand which surface processes are mainly responsible for it. In this work, we analyse the surface response of two materials, a semiconductor (silicon) and a metal (aluminium) under irradiation with the 250 eV and 1000 eV Ar ions focused at 70° from the normal to the surface. We simulate consecutive ion impacts by the means of molecular dynamics to investigate the effect on ripple formation. We find that the redistribution mechanism seems to be the main creator of ripples in amorphous materials, while the erosion mechanism is the leading origin for the pattern formation in crystalline metals.
Alkuperäiskielienglanti
Artikkeli075302
LehtiJournal of Physics. Condensed Matter
Vuosikerta31
Numero7
Sivumäärä13
ISSN0953-8984
DOI - pysyväislinkit
TilaJulkaistu - 20 helmikuuta 2019
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä, vertaisarvioitu

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  • 114 Fysiikka

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title = "Modeling of high-fluence irradiation of amorphous Si and crystalline Al by linearly focused Ar ions",
abstract = "Long time ion irradiation of surfaces under tilted incidence causes formation of regular nanostructures known as surface ripples. The nature of mechanisms leading to ripples is still not clear, this is why computational methods can shed the light on such a complex phenomenon and help to understand which surface processes are mainly responsible for it. In this work, we analyse the surface response of two materials, a semiconductor (silicon) and a metal (aluminium) under irradiation with the 250 eV and 1000 eV Ar ions focused at 70° from the normal to the surface. We simulate consecutive ion impacts by the means of molecular dynamics to investigate the effect on ripple formation. We find that the redistribution mechanism seems to be the main creator of ripples in amorphous materials, while the erosion mechanism is the leading origin for the pattern formation in crystalline metals.",
keywords = "nanostructuring, redistribution, erosion, surface, ripple formation, MOLECULAR-DYNAMICS, INTERATOMIC POTENTIALS, SIMULATION, 114 Physical sciences",
author = "Alvaro Lopez-Cazalilla and Andrew Ilinov and Kai Nordlund and Flyura Djurabekova",
year = "2019",
month = "2",
day = "20",
doi = "10.1088/1361-648X/aaf59f",
language = "English",
volume = "31",
journal = "Journal of Physics. Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing",
number = "7",

}

Modeling of high-fluence irradiation of amorphous Si and crystalline Al by linearly focused Ar ions. / Lopez-Cazalilla, Alvaro; Ilinov, Andrew; Nordlund, Kai; Djurabekova, Flyura.

julkaisussa: Journal of Physics. Condensed Matter, Vuosikerta 31, Nro 7, 075302, 20.02.2019.

Tutkimustuotos: ArtikkelijulkaisuArtikkeliTieteellinenvertaisarvioitu

TY - JOUR

T1 - Modeling of high-fluence irradiation of amorphous Si and crystalline Al by linearly focused Ar ions

AU - Lopez-Cazalilla, Alvaro

AU - Ilinov, Andrew

AU - Nordlund, Kai

AU - Djurabekova, Flyura

PY - 2019/2/20

Y1 - 2019/2/20

N2 - Long time ion irradiation of surfaces under tilted incidence causes formation of regular nanostructures known as surface ripples. The nature of mechanisms leading to ripples is still not clear, this is why computational methods can shed the light on such a complex phenomenon and help to understand which surface processes are mainly responsible for it. In this work, we analyse the surface response of two materials, a semiconductor (silicon) and a metal (aluminium) under irradiation with the 250 eV and 1000 eV Ar ions focused at 70° from the normal to the surface. We simulate consecutive ion impacts by the means of molecular dynamics to investigate the effect on ripple formation. We find that the redistribution mechanism seems to be the main creator of ripples in amorphous materials, while the erosion mechanism is the leading origin for the pattern formation in crystalline metals.

AB - Long time ion irradiation of surfaces under tilted incidence causes formation of regular nanostructures known as surface ripples. The nature of mechanisms leading to ripples is still not clear, this is why computational methods can shed the light on such a complex phenomenon and help to understand which surface processes are mainly responsible for it. In this work, we analyse the surface response of two materials, a semiconductor (silicon) and a metal (aluminium) under irradiation with the 250 eV and 1000 eV Ar ions focused at 70° from the normal to the surface. We simulate consecutive ion impacts by the means of molecular dynamics to investigate the effect on ripple formation. We find that the redistribution mechanism seems to be the main creator of ripples in amorphous materials, while the erosion mechanism is the leading origin for the pattern formation in crystalline metals.

KW - nanostructuring

KW - redistribution

KW - erosion

KW - surface

KW - ripple formation

KW - MOLECULAR-DYNAMICS

KW - INTERATOMIC POTENTIALS

KW - SIMULATION

KW - 114 Physical sciences

U2 - 10.1088/1361-648X/aaf59f

DO - 10.1088/1361-648X/aaf59f

M3 - Article

VL - 31

JO - Journal of Physics. Condensed Matter

JF - Journal of Physics. Condensed Matter

SN - 0953-8984

IS - 7

M1 - 075302

ER -