Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

V. D. S Dhaka; N. V Tkachenko; E.-M Pavelescu; H Lemmetyinen; T Hakkarainen; M Guina; J Konttinen; O Okhotnikov; M Pessa; Kai Arstila; Juhani Keinonen

doi:10.1088/1367-2630/7/1/131

Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

V. D. S Dhaka
, N. V Tkachenko
, E.-M Pavelescu
, H Lemmetyinen
, T Hakkarainen
, M Guina
, J Konttinen
, O Okhotnikov
, M Pessa
, Kai Arstila
, Juhani Keinonen

Tutkimustuotos: Artikkelijulkaisu › Artikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.

Alkuperäiskieli	englanti
Lehti	New Journal of Physics
Vuosikerta	7
Numero	131
Sivumäärä	11
ISSN	1367-2630
DOI - pysyväislinkit	https://doi.org/10.1088/1367-2630/7/1/131
Tila	Julkaistu - 2005
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä, vertaisarvioitu

Tieteenalat

114 Fysiikka

Pääsy asiakirjaan

10.1088/1367-2630/7/1/131

njp5_1_131Lopullinen julkaistu versio, 199 KBLisenssi: CC BY

Siteeraa tätä

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abstract = "Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.",

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T1 - Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

AU - Dhaka, V. D. S

AU - Tkachenko, N. V

AU - Pavelescu, E.-M

AU - Lemmetyinen, H

AU - Hakkarainen, T

AU - Guina, M

AU - Konttinen, J

AU - Okhotnikov, O

AU - Pessa, M

AU - Arstila, Kai

AU - Keinonen, Juhani

PY - 2005

Y1 - 2005

N2 - Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.

AB - Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.

KW - 114 Physical sciences

U2 - 10.1088/1367-2630/7/1/131

DO - 10.1088/1367-2630/7/1/131

M3 - Article

SN - 1367-2630

VL - 7

JO - New Journal of Physics

JF - New Journal of Physics

IS - 131

ER -