Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible

A. Lopez-Cazalilla, D. Chowdhury, A. Ilinov, S. Mondal, P. Barman, S. R. Bhattacharyya, D. Ghose, F. Djurabekova, K. Nordlund, S. Norris

Tutkimustuotos: Artikkelijulkaisu › Artikkeli › Tieteellinen › vertaisarvioitu

Alkuperäiskielienglanti
Artikkeli235108
LehtiJournal of Applied Physics
Vuosikerta123
Numero23
Sivumäärä10
ISSN0021-8979
DOI - pysyväislinkit
TilaJulkaistu - 21 kesäkuuta 2018
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä, vertaisarvioitu

Tieteenalat

  • 114 Fysiikka

Lainaa tätä

Lopez-Cazalilla, A., Chowdhury, D., Ilinov, A., Mondal, S., Barman, P., Bhattacharyya, S. R., ... Norris, S. (2018). Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible. Journal of Applied Physics, 123(23), [235108]. https://doi.org/10.1063/1.5026447
Lopez-Cazalilla, A. ; Chowdhury, D. ; Ilinov, A. ; Mondal, S. ; Barman, P. ; Bhattacharyya, S. R. ; Ghose, D. ; Djurabekova, F. ; Nordlund, K. ; Norris, S. / Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible. Julkaisussa: Journal of Applied Physics. 2018 ; Vuosikerta 123, Nro 23.
@article{33a497a99adb4d439a898effb3a031d6,
title = "Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible",
keywords = "MOLECULAR-DYNAMICS, A-SI, BOMBARDMENT, SILICON, SIMULATION, RANGE, BULK, 114 Physical sciences",
author = "A. Lopez-Cazalilla and D. Chowdhury and A. Ilinov and S. Mondal and P. Barman and Bhattacharyya, {S. R.} and D. Ghose and F. Djurabekova and K. Nordlund and S. Norris",
year = "2018",
month = "6",
day = "21",
doi = "10.1063/1.5026447",
language = "English",
volume = "123",
journal = "Journal of Applied Physics",
issn = "0021-8979",
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Lopez-Cazalilla, A, Chowdhury, D, Ilinov, A, Mondal, S, Barman, P, Bhattacharyya, SR, Ghose, D, Djurabekova, F, Nordlund, K & Norris, S 2018, 'Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible' Journal of Applied Physics, Vuosikerta 123, Nro 23, 235108. https://doi.org/10.1063/1.5026447

Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible. / Lopez-Cazalilla, A.; Chowdhury, D.; Ilinov, A.; Mondal, S.; Barman, P.; Bhattacharyya, S. R.; Ghose, D.; Djurabekova, F.; Nordlund, K.; Norris, S.

julkaisussa: Journal of Applied Physics, Vuosikerta 123, Nro 23, 235108, 21.06.2018.

Tutkimustuotos: Artikkelijulkaisu › Artikkeli › Tieteellinen › vertaisarvioitu

TY - JOUR

T1 - Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible

AU - Lopez-Cazalilla, A.

AU - Chowdhury, D.

AU - Ilinov, A.

AU - Mondal, S.

AU - Barman, P.

AU - Bhattacharyya, S. R.

AU - Ghose, D.

AU - Djurabekova, F.

AU - Nordlund, K.

AU - Norris, S.

PY - 2018/6/21

Y1 - 2018/6/21

KW - MOLECULAR-DYNAMICS

KW - A-SI

KW - BOMBARDMENT

KW - SILICON

KW - SIMULATION

KW - RANGE

KW - BULK

KW - 114 Physical sciences

U2 - 10.1063/1.5026447

DO - 10.1063/1.5026447

M3 - Article

VL - 123

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 23

M1 - 235108

ER -

Lopez-Cazalilla A, Chowdhury D, Ilinov A, Mondal S, Barman P, Bhattacharyya SR et al. Pattern formation on ion-irradiated Si surface at energies where sputtering is negligible. Journal of Applied Physics. 2018 kesä 21;123(23). 235108. https://doi.org/10.1063/1.5026447

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