Photon Detector Research at Helsinki Institute of Physics (HIP) and at Ruder Boskovic Institute (RBI)

Jens Erik Brucken, Akiko Gädda, Jennifer Ott, Tiina Sirea Naaranoja, Laura Emilia Martikainen, Aneliya Karadzhinova, Matti Kalevi Kalliokoski, Maria Golovleva, Stefanie Kirschenmann, Vladyslav Litichevskyi, A. Petrinec, Panja Luukka, Jaakko Juhana Härkönen, Ana Petrinec

Tutkimustuotos: ArtikkelijulkaisuKonferenssiartikkeliTieteellinen

Abstrakti

In this report we describe a design, fabrication process and characterization of photon detectors made of bulk Cadmium Telluride (CdTe) crystals, silicon drift detectors (SDD) and silicon detectors attached with conversion layer scintillator materials (SiS). The Si wafer and chip-scale CdTe detector processing with related interconnection processing was carried out in clean room premises of Micronova center in Espoo, Finland. Unlike Si wafers, CdTe processing must be carried out at the temperatures lower than 150C. Thus, we have developed a low temperature passivation layer processes of aluminum oxide (Al2O3) grown by Atomic Layer Deposition (ALD) method. The CdTe crystals of the size of 10 × 10 × 1mm3 were patterned with proximity-contactless photo-lithography techniques. The detector properties were characterized by IV-CV, Transient Current Technique (TCT) and scanning micrometer precision proton beam methods. The experimental results were verified with TCAD simulations with appropriate defect and material parameters.
Alkuperäiskielienglanti
LehtiXiangtan Daxue Ziran Kexue xuebao
Numero4/2018
Sivut115-120
Sivumäärä6
ISSN1000-5900
DOI - pysyväislinkit
TilaJulkaistu - elokuuta 2018
OKM-julkaisutyyppiB3 Vertaisarvioimaton artikkeli konferenssijulkaisussa
TapahtumaSecond Workshop of Semiconductor Detectors and International High Level Forum - Huayin International Hotel, Xiangtan, Kiina
Kesto: 13 elokuuta 201815 elokuuta 2018

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