Reductive Thermal Atomic Layer Deposition Process for Gold

Anton Vihervaara; Timo Hatanpää; Heta Nieminen; Kenichiro Mizohata; Mykhailo Chundak; Mikko Ritala

doi:10.1021/acsmaterialsau.2c00075

Reductive Thermal Atomic Layer Deposition Process for Gold

Anton Vihervaara, Timo Hatanpää, Heta Nieminen, Kenichiro Mizohata, Mykhailo Chundak, Mikko Ritala

Tutkimustuotos: Artikkelijulkaisu › Artikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.

Alkuperäiskieli	englanti
Lehti	ACS materials Au
Vuosikerta	3
Numero	3
Sivut	206-214
Sivumäärä	9
DOI - pysyväislinkit	https://doi.org/10.1021/acsmaterialsau.2c00075
Tila	Julkaistu - toukok. 2023
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä, vertaisarvioitu

Tieteenalat

116 Kemia
Atomic layer deposition (ALD)
Thin film deposition
Gold
Reducing agent

Pääsy asiakirjaan

10.1021/acsmaterialsau.2c00075Lisenssi: CC BY

acsmaterialsau.2c00075Lopullinen julkaistu versio, 10,3 MBLisenssi: CC BY

HelsinkiALD
Putkonen, M. (Johtaja), Ritala, M. (Johtaja), Mäntymäki, M. (Operaattori), Kemell, M. (Operaattori), Vehkamäki, M. (Operaattori) & Heikkilä, M. (Operaattori)
Kemian osasto
Laitteistot/tilat: Tutkimuslaboratorio

Siteeraa tätä

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title = "Reductive Thermal Atomic Layer Deposition Process for Gold",

abstract = "In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.",

keywords = "116 Chemical sciences, Atomic layer deposition (ALD), Thin film deposition, Gold, Reducing agent",

author = "Anton Vihervaara and Timo Hatanp{\"a}{\"a} and Heta Nieminen and Kenichiro Mizohata and Mykhailo Chundak and Mikko Ritala",

year = "2023",

month = may,

doi = "10.1021/acsmaterialsau.2c00075",

language = "English",

volume = "3",

pages = "206--214",

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publisher = "American Chemical Society",

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TY - JOUR

T1 - Reductive Thermal Atomic Layer Deposition Process for Gold

AU - Vihervaara, Anton

AU - Hatanpää, Timo

AU - Nieminen, Heta

AU - Mizohata, Kenichiro

AU - Chundak, Mykhailo

AU - Ritala, Mikko

PY - 2023/5

Y1 - 2023/5

N2 - In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.

AB - In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.

KW - 116 Chemical sciences

KW - Atomic layer deposition (ALD)

KW - Thin film deposition

KW - Gold

KW - Reducing agent

U2 - 10.1021/acsmaterialsau.2c00075

DO - 10.1021/acsmaterialsau.2c00075

M3 - Article

SN - 2694-2461

VL - 3

SP - 206

EP - 214

JO - ACS materials Au

JF - ACS materials Au

IS - 3

ER -

Reductive Thermal Atomic Layer Deposition Process for Gold

Abstrakti

Tieteenalat

Pääsy asiakirjaan

Laitteet

HelsinkiALD

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