Selective-area atomic layer deposition with microcontact printed self-assembled octadecyltrichlorosilane monolayers as mask layers

    Tutkimustuotos: ArtikkelijulkaisuArtikkeliTieteellinenvertaisarvioitu

    Abstrakti

    Selective-area atomic layer deposition (ALD) was studied using microcontact printed self-assembled monolayers (SAM) as growth preventing mask layers. Patterned self-assembled octadecyltrichlorosilane (OTS, H3C(CH2)(17)SiCl3) monolayers were prepared on the silicon (100) surface by an elastomeric stamp which had 1.5 mu m wide parallel print lines with 1.5 mu m wide spaces in between. Passivation properties of the monolayers against ALD growth were verified by ALD processes of iridium and TiO2. Iridium was grown at 225 degrees C and TiO2 at 250 degrees C. The quality of SAM was controlled by water contact angle measurements. Patterned iridium and TiO2 films were studied with field emission scanning electron microscope and energy dispersive X-ray spectrometer. (C) 2008 Elsevier B.V. All rights reserved.
    Alkuperäiskielienglanti
    LehtiThin Solid Films
    Vuosikerta517
    Numero2
    Sivut972-975
    Sivumäärä4
    ISSN0040-6090
    DOI - pysyväislinkit
    TilaJulkaistu - 2008
    OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä, vertaisarvioitu

    Tieteenalat

    • 116 Kemia

    Siteeraa tätä