Studies on Atomic Layer Deposition of IRMOF-8 Thin Films

Leo Salmi, Mikko Heikkilä, Marko Vehkamäki, Esa Puukilainen, Timo Pekka Sajavaara, Mikko Ritala

Tutkimustuotos: ArtikkelijulkaisuArtikkeliTieteellinenvertaisarvioitu

Kuvaus

Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 °C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.
Alkuperäiskielienglanti
ArtikkeliARTN 01A121
LehtiJournal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films
Vuosikerta33
Numero1
Sivut01A121-1 - 01A121-8
Sivumäärä8
ISSN1553-1813
DOI - pysyväislinkit
TilaJulkaistu - tammikuuta 2015
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä, vertaisarvioitu

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  • 116 Kemia

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@article{ebc8cd5f0b24451db31ae2eed00c95b9,
title = "Studies on Atomic Layer Deposition of IRMOF-8 Thin Films",
abstract = "Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 °C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70{\%} relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.",
keywords = "116 Chemical sciences",
author = "Leo Salmi and Mikko Heikkil{\"a} and Marko Vehkam{\"a}ki and Esa Puukilainen and Sajavaara, {Timo Pekka} and Mikko Ritala",
year = "2015",
month = "1",
doi = "10.1116/1.4901455",
language = "English",
volume = "33",
pages = "01A121--1 -- 01A121--8",
journal = "Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films",
issn = "1553-1813",
publisher = "American Institute of Physics",
number = "1",

}

Studies on Atomic Layer Deposition of IRMOF-8 Thin Films. / Salmi, Leo; Heikkilä, Mikko; Vehkamäki, Marko; Puukilainen, Esa; Sajavaara, Timo Pekka; Ritala, Mikko.

julkaisussa: Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films, Vuosikerta 33, Nro 1, ARTN 01A121, 01.2015, s. 01A121-1 - 01A121-8.

Tutkimustuotos: ArtikkelijulkaisuArtikkeliTieteellinenvertaisarvioitu

TY - JOUR

T1 - Studies on Atomic Layer Deposition of IRMOF-8 Thin Films

AU - Salmi, Leo

AU - Heikkilä, Mikko

AU - Vehkamäki, Marko

AU - Puukilainen, Esa

AU - Sajavaara, Timo Pekka

AU - Ritala, Mikko

PY - 2015/1

Y1 - 2015/1

N2 - Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 °C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.

AB - Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 °C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.

KW - 116 Chemical sciences

U2 - 10.1116/1.4901455

DO - 10.1116/1.4901455

M3 - Article

VL - 33

SP - 01A121-1 - 01A121-8

JO - Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films

JF - Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films

SN - 1553-1813

IS - 1

M1 - ARTN 01A121

ER -