Study of the influence of the dielectric composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

H. Castán; S. Dueñas; K. Kukli; M. Kemell; M. Ritala; M. Leskelä

doi:10.1149/08508.0143ecst

Study of the influence of the dielectric composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

H. Castán, S. Dueñas, K. Kukli, M. Kemell, M. Ritala, M. Leskelä

Tutkimustuotos: Artikkelijulkaisu › Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

The memory behavior of Al/Ti/ZrO2:Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps. © The Electrochemical Society.

Alkuperäiskieli	englanti
Lehti	ECS transactions
Vuosikerta	85
Numero	8
Sivut	143-148
Sivumäärä	6
ISSN	1938-5862
DOI - pysyväislinkit	https://doi.org/10.1149/08508.0143ecst
Tila	Julkaistu - 2018
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	ECS Meeting: Advanced CMOS-Compatible Semiconductor Devices 18 - Seattle, Yhdysvallat (USA) Kesto: 13 toukok. 2018 → 17 toukok. 2018 Konferenssinumero: 233 https://www.electrochem.org/233

Tieteenalat

116 Kemia

Pääsy asiakirjaan

10.1149/08508.0143ecst

Castan_ECST_2018 with Duenas-Kemell-Kukli-Ritala-LeskeläHyväksytty kirjoittajan käsikirjoitus, 374 KBLisenssi: Määrittelemätön

Siteeraa tätä

@article{56e1c13936b34f3ba0c62843e4e30253,

title = "Study of the influence of the dielectric composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications",

abstract = "The memory behavior of Al/Ti/ZrO2:Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps. {\textcopyright} The Electrochemical Society.",

keywords = "Alumina, Aluminum oxide, Admittance parameters, Cation ratio, Dielectric compositions, Electrical characterization, Intermediate state, Memory applications, Resistive switching behaviors, Resistive switching memory, Semiconductor devices, 116 Chemical sciences",

author = "H. Cast{\'a}n and S. Due{\~n}as and K. Kukli and M. Kemell and M. Ritala and M. Leskel{\"a}",

year = "2018",

doi = "10.1149/08508.0143ecst",

language = "English",

volume = "85",

pages = "143--148",

journal = "ECS transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc",

number = "8",

note = "ECS Meeting : Advanced CMOS-Compatible Semiconductor Devices 18 , ECS 2018 ; Conference date: 13-05-2018 Through 17-05-2018",

url = "https://www.electrochem.org/233",

}

TY - JOUR

T1 - Study of the influence of the dielectric composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

AU - Castán, H.

AU - Dueñas, S.

AU - Kukli, K.

AU - Kemell, M.

AU - Ritala, M.

AU - Leskelä, M.

N1 - Conference code: 233

PY - 2018

Y1 - 2018

N2 - The memory behavior of Al/Ti/ZrO2:Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps. © The Electrochemical Society.

AB - The memory behavior of Al/Ti/ZrO2:Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps. © The Electrochemical Society.

KW - Alumina

KW - Aluminum oxide, Admittance parameters

KW - Cation ratio

KW - Dielectric compositions

KW - Electrical characterization

KW - Intermediate state

KW - Memory applications

KW - Resistive switching behaviors

KW - Resistive switching memory, Semiconductor devices

KW - 116 Chemical sciences

U2 - 10.1149/08508.0143ecst

DO - 10.1149/08508.0143ecst

M3 - Conference article

SN - 1938-5862

VL - 85

SP - 143

EP - 148

JO - ECS transactions

JF - ECS transactions

IS - 8

T2 - ECS Meeting

Y2 - 13 May 2018 through 17 May 2018

ER -