Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb

J. Kujala, T. Suedkamp, J. Slotte, I. Makkonen, F. Tuomisto, H. Bracht

Tutkimustuotos: ArtikkelijulkaisuArtikkeliTieteellinenvertaisarvioitu

Abstrakti

Positron annihilation spectroscopy was performed to study defects in Ge doped with As, P and Sb. In each case, the samples had approximately the same dopant concentration similar to 10(19) cm(-3). Results from the Doppler broadening and positron lifetime spectroscopies were compared to electronic structure calculations. The positron lifetime results show that the open volume related to the defect centers is not larger than a monovacancy. The results suggest that in the As doped sample the dominant trap at room temperature is a complex consisting of a vacancy and at least three dopant atoms. In the case of P doped Ge the results indicate that two defect complexes compete in positron trapping. Complexes with a higher number of P atoms around the vacancy seem to dominate at room temperature whereas at low temperature positron trapping at centers with fewer P atoms around the vacancy becomes more significant. The complexes with fewer P atoms are more negatively charged. In Sb doped Ge the results suggest that several types of traps are simultaneously competing in positron trapping at all measurement temperatures.
Alkuperäiskielienglanti
Artikkeli335801
LehtiJournal of Physics. Condensed Matter
Vuosikerta28
Numero33
Sivumäärä7
ISSN0953-8984
DOI - pysyväislinkit
TilaJulkaistu - 24 elokuuta 2016
Julkaistu ulkoisestiKyllä
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä, vertaisarvioitu

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