Sammanfattning
The atomic configurations and concentrations of intrinsic defects profoundly influence the electrical and optical properties of the semiconductor materials. This influence is particularly significant in the case of β-Ga2O3, which is a highly promising ultrawide bandgap semiconductor characterized by highly complex intrinsic defect configurations. Despite its importance, there is a notable absence of an accurate method to recognize these defects in large-scale atomistic computational modeling. We design an effective algorithm for the explicit identification of various intrinsic point defects in the β-Ga2O3 lattice, which constitutes the integration of the particle swarm optimization (PSO) and K-means clustering (K-MC) methods. Our algorithm attains the recognition accuracy exceeding 95%. Finally, the algorithm is applied to dynamic simulations, where the feasibility of dynamic real-time detection is explored.
Originalspråk | engelska |
---|---|
Tidskrift | Journal of Physical Chemistry Letters |
Volym | 15 |
Nummer | 42 |
Sidor (från-till) | 10677-10685 |
Antal sidor | 9 |
ISSN | 1948-7185 |
DOI | |
Status | Publicerad - 16 okt. 2024 |
MoE-publikationstyp | A1 Tidskriftsartikel-refererad |
Bibliografisk information
Publisher Copyright:© 2024 American Chemical Society.
Vetenskapsgrenar
- 114 Fysik